Electrical properties of polycrystalline silicon layers under solar illumination

C. A. Dimitriadis; A. Alexandrou; N. A. Economou

doi:10.1063/1.337571

Electrical properties of polycrystalline silicon layers under solar illumination

C. A. Dimitriadis
, A. Alexandrou
, N. A. Economou

Aristotle University of Thessaloniki

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.

langue originale	Anglais
Pages (de - à)	3651-3655
Nombre de pages	5
journal	Journal of Applied Physics
Volume	60
Numéro de publication	10
Les DOIs	https://doi.org/10.1063/1.337571
état	Publié - 1 janv. 1986
Modification externe	Oui

Accès au document

10.1063/1.337571

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

@article{58f2ce9d9ce5437e9ab1a2f8ac49be0c,

title = "Electrical properties of polycrystalline silicon layers under solar illumination",

abstract = "A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.",

author = "Dimitriadis, \{C. A.\} and A. Alexandrou and Economou, \{N. A.\}",

year = "1986",

month = jan,

day = "1",

doi = "10.1063/1.337571",

language = "English",

volume = "60",

pages = "3651--3655",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "10",

}

TY - JOUR

T1 - Electrical properties of polycrystalline silicon layers under solar illumination

AU - Dimitriadis, C. A.

AU - Alexandrou, A.

AU - Economou, N. A.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.

AB - A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.

UR - https://www.scopus.com/pages/publications/33750627405

U2 - 10.1063/1.337571

DO - 10.1063/1.337571

M3 - Article

AN - SCOPUS:33750627405

SN - 0021-8979

VL - 60

SP - 3651

EP - 3655

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Electrical properties of polycrystalline silicon layers under solar illumination

Résumé

Accès au document

Autres fichiers et liens

Empreinte digitale

Contient cette citation