Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier

L. Lombez; P. F. Braun; P. Renucci; P. Gallo; H. Carrère; P. H. Binh; X. Marie; T. Amand; J. L. Gaufrier; B. Urbaszek; A. Arnoult; C. Fontaine; C. Deranlot; R. Mattana; H. Jaffrès

doi:10.1002/pssc.200673320

Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier

L. Lombez
, P. F. Braun
, P. Renucci
, P. Gallo
, H. Carrère
, P. H. Binh
, X. Marie
, T. Amand
, J. L. Gaufrier
, B. Urbaszek
, A. Arnoult
, C. Fontaine
, C. Deranlot
, R. Mattana
, H. Jaffrès

INSA Toulouse
LAAS-CNRS
Institute of Material Science
Université Paris-Sud

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

1 Citation (Scopus)

Résumé

We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al₂O₃/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35%.

langue originale	Anglais
Pages (de - à)	567-569
Nombre de pages	3
journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Numéro de publication	2
Les DOIs	https://doi.org/10.1002/pssc.200673320
état	Publié - 1 déc. 2007
Modification externe	Oui
Evénement	International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turquie Durée: 30 juil. 2006 → 4 août 2006

Accès au document

10.1002/pssc.200673320

Contient cette citation

Lombez, L., Braun, P. F., Renucci, P., Gallo, P., Carrère, H., Binh, P. H., Marie, X., Amand, T., Gaufrier, J. L., Urbaszek, B., Arnoult, A., Fontaine, C., Deranlot, C., Mattana, R., & Jaffrès, H. (2007). Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier. Physica Status Solidi (C) Current Topics in Solid State Physics, 4(2), 567-569. https://doi.org/10.1002/pssc.200673320

@article{58337478909842f48c89eeafbd7c8290,

title = "Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier",

abstract = "We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al2O3/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 \% at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35\%.",

author = "L. Lombez and Braun, \{P. F.\} and P. Renucci and P. Gallo and H. Carr{\`e}re and Binh, \{P. H.\} and X. Marie and T. Amand and Gaufrier, \{J. L.\} and B. Urbaszek and A. Arnoult and C. Fontaine and C. Deranlot and R. Mattana and H. Jaffr{\`e}s",

year = "2007",

month = dec,

day = "1",

doi = "10.1002/pssc.200673320",

language = "English",

volume = "4",

pages = "567--569",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "2",

note = "International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 ; Conference date: 30-07-2006 Through 04-08-2006",

}

Lombez, L, Braun, PF, Renucci, P, Gallo, P, Carrère, H, Binh, PH, Marie, X, Amand, T, Gaufrier, JL, Urbaszek, B, Arnoult, A, Fontaine, C, Deranlot, C, Mattana, R & Jaffrès, H 2007, 'Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier', Physica Status Solidi (C) Current Topics in Solid State Physics, VOL. 4, Numéro 2, p. 567-569. https://doi.org/10.1002/pssc.200673320

TY - JOUR

T1 - Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier

AU - Lombez, L.

AU - Braun, P. F.

AU - Renucci, P.

AU - Gallo, P.

AU - Carrère, H.

AU - Binh, P. H.

AU - Marie, X.

AU - Amand, T.

AU - Gaufrier, J. L.

AU - Urbaszek, B.

AU - Arnoult, A.

AU - Fontaine, C.

AU - Deranlot, C.

AU - Mattana, R.

AU - Jaffrès, H.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al2O3/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35%.

AB - We have demonstrated by CW electroluminescence the ability to inject spin polarized electrons through Co/Al2O3/GaAs structures into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at 1.7 K in a 2 T magnetic field, leading to an estimation of the electrical spin injection yield of about 35%.

U2 - 10.1002/pssc.200673320

DO - 10.1002/pssc.200673320

M3 - Conference article

AN - SCOPUS:50049110989

SN - 1862-6351

VL - 4

SP - 567

EP - 569

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 2

T2 - International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006

Y2 - 30 July 2006 through 4 August 2006

ER -

Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al2O3/GaAs tunnel barrier

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Contient cette citation

Electrical spin injection in InAs/GaAs p-doped quantum dots through Co/Al₂O₃/GaAs tunnel barrier