Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

P. Barate; S. Liang; T. T. Zhang; J. Frougier; M. Vidal; P. Renucci; X. Devaux; B. Xu; H. Jaffrès; J. M. George; X. Marie; M. Hehn; S. Mangin; Y. Zheng; T. Amand; B. Tao; X. F. Han; Z. Wang; Y. Lu

doi:10.1063/1.4887347

Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

P. Barate
, S. Liang
, T. T. Zhang
, J. Frougier
, M. Vidal
, P. Renucci
, X. Devaux
, B. Xu
, H. Jaffrès
, J. M. George
, X. Marie
, M. Hehn
, S. Mangin
, Y. Zheng
, T. Amand
, B. Tao
, X. F. Han
, Z. Wang
, Y. Lu

Université Paul Sabatier
Univ.́ Henri Poincaré
Unité Mixte de Physique CNRS/Thales
Institute of Semiconductors Chinese Academy of Sciences
CNRS, UMR 7588, INSP
Institute of Physics Chinese Academy of Sciences

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (P_c) with the increase of annealing temperature, followed by a saturation of P_c beyond 350°C annealing. Since the increase of P_c starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.

langue originale	Anglais
Numéro d'article	012404
journal	Applied Physics Letters
Volume	105
Numéro de publication	1
Les DOIs	https://doi.org/10.1063/1.4887347
état	Publié - 7 juil. 2014
Modification externe	Oui

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10.1063/1.4887347

Contient cette citation

Barate, P., Liang, S., Zhang, T. T., Frougier, J., Vidal, M., Renucci, P., Devaux, X., Xu, B., Jaffrès, H., George, J. M., Marie, X., Hehn, M., Mangin, S., Zheng, Y., Amand, T., Tao, B., Han, X. F., Wang, Z., & Lu, Y. (2014). Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods. Applied Physics Letters, 105(1), Article 012404. https://doi.org/10.1063/1.4887347

@article{e9e80608dabf4c118c4bf580bc383628,

title = "Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods",

abstract = "An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.",

author = "P. Barate and S. Liang and Zhang, \{T. T.\} and J. Frougier and M. Vidal and P. Renucci and X. Devaux and B. Xu and H. Jaffr{\`e}s and George, \{J. M.\} and X. Marie and M. Hehn and S. Mangin and Y. Zheng and T. Amand and B. Tao and Han, \{X. F.\} and Z. Wang and Y. Lu",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = jul,

day = "7",

doi = "10.1063/1.4887347",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "1",

}

Barate, P, Liang, S, Zhang, TT, Frougier, J, Vidal, M, Renucci, P, Devaux, X, Xu, B, Jaffrès, H, George, JM, Marie, X, Hehn, M, Mangin, S, Zheng, Y, Amand, T, Tao, B, Han, XF, Wang, Z & Lu, Y 2014, 'Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods', Applied Physics Letters, VOL. 105, Numéro 1, 012404. https://doi.org/10.1063/1.4887347

TY - JOUR

T1 - Electrical spin injection into InGaAs/GaAs quantum wells

T2 - A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

AU - Barate, P.

AU - Liang, S.

AU - Zhang, T. T.

AU - Frougier, J.

AU - Vidal, M.

AU - Renucci, P.

AU - Devaux, X.

AU - Xu, B.

AU - Jaffrès, H.

AU - George, J. M.

AU - Marie, X.

AU - Hehn, M.

AU - Mangin, S.

AU - Zheng, Y.

AU - Amand, T.

AU - Tao, B.

AU - Han, X. F.

AU - Wang, Z.

AU - Lu, Y.

PY - 2014/7/7

Y1 - 2014/7/7

N2 - An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.

AB - An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor.

U2 - 10.1063/1.4887347

DO - 10.1063/1.4887347

M3 - Article

AN - SCOPUS:84908541912

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012404

ER -

Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

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