Electroluminescence of excitons in an InGaAs quantum well

D. Bajoni; S. Bouchoule; A. Miard; A. Lemaître; J. Tignon; J. Bloch

doi:10.1016/j.spmi.2007.03.012

Electroluminescence of excitons in an InGaAs quantum well

D. Bajoni
, S. Bouchoule
, A. Miard
, A. Lemaître
, J. Tignon
, J. Bloch

Centre de Nanosciences et de Nanotechnologies
PSL research University & IPSL

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p-i-n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.

langue originale	Anglais
Pages (de - à)	368-371
Nombre de pages	4
journal	Superlattices and Microstructures
Volume	41
Numéro de publication	5-6
Les DOIs	https://doi.org/10.1016/j.spmi.2007.03.012
état	Publié - 1 janv. 2007
Modification externe	Oui

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10.1016/j.spmi.2007.03.012

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@article{743d9d4bcb1148118304da7e39bf1d7d,

title = "Electroluminescence of excitons in an InGaAs quantum well",

abstract = "We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p-i-n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.",

keywords = "Electrical injection, Excitons",

author = "D. Bajoni and S. Bouchoule and A. Miard and A. Lema{\^i}tre and J. Tignon and J. Bloch",

year = "2007",

month = jan,

day = "1",

doi = "10.1016/j.spmi.2007.03.012",

language = "English",

volume = "41",

pages = "368--371",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

number = "5-6",

}

TY - JOUR

T1 - Electroluminescence of excitons in an InGaAs quantum well

AU - Bajoni, D.

AU - Bouchoule, S.

AU - Miard, A.

AU - Lemaître, A.

AU - Tignon, J.

AU - Bloch, J.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p-i-n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.

AB - We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p-i-n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.

KW - Electrical injection

KW - Excitons

UR - https://www.scopus.com/pages/publications/34249983402

U2 - 10.1016/j.spmi.2007.03.012

DO - 10.1016/j.spmi.2007.03.012

M3 - Article

AN - SCOPUS:34249983402

SN - 0749-6036

VL - 41

SP - 368

EP - 371

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5-6

ER -

Electroluminescence of excitons in an InGaAs quantum well

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