Electron-beam-induced current quantitative mapping: application to Si solar cells

A. Barhdadi; M. Barbé; A. Riviére; J. L. Maurice

doi:10.1016/0921-5107(94)90300-X

Electron-beam-induced current quantitative mapping: application to Si solar cells

A. Barhdadi
, M. Barbé
, A. Riviére
, J. L. Maurice

CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght L_D. Only one digital image, recorded in appropriate conditions, allows one to determine L_D in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

langue originale	Anglais
Pages (de - à)	68-73
Nombre de pages	6
journal	Materials Science and Engineering: B
Volume	24
Numéro de publication	1-3
Les DOIs	https://doi.org/10.1016/0921-5107(94)90300-X
état	Publié - 1 janv. 1994

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10.1016/0921-5107(94)90300-X

Contient cette citation

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title = "Electron-beam-induced current quantitative mapping: application to Si solar cells",

abstract = "Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght LD. Only one digital image, recorded in appropriate conditions, allows one to determine LD in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.",

author = "A. Barhdadi and M. Barb{\'e} and A. Rivi{\'e}re and Maurice, \{J. L.\}",

year = "1994",

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T2 - application to Si solar cells

AU - Barhdadi, A.

AU - Barbé, M.

AU - Riviére, A.

AU - Maurice, J. L.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght LD. Only one digital image, recorded in appropriate conditions, allows one to determine LD in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

AB - Computer processing of electron-beam-induced current images is reported. The grey levels of the image are converted into values of minority-carrier diffusion lenght LD. Only one digital image, recorded in appropriate conditions, allows one to determine LD in any chosen area of the device. The technique is applied for performing quantitative high resolution assessment of diffusion length in large-grained polycrystalline silicon, in as-grown material as well as in fully processed solar cells.

U2 - 10.1016/0921-5107(94)90300-X

DO - 10.1016/0921-5107(94)90300-X

M3 - Article

AN - SCOPUS:0028430243

SN - 0921-5107

VL - 24

SP - 68

EP - 73

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Electron-beam-induced current quantitative mapping: application to Si solar cells

Résumé

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