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Electron relaxation in SiO2 under strong laser field using high order harmonics generation

  • Ph Martin
  • , H. Merdji
  • , S. Guizard
  • , G. Petite
  • , F. Quéré
  • , B. Carré
  • , J. F. Hergott
  • , L. Le Déroff
  • , P. Salières
  • , O. Gobert
  • , P. Meynadier
  • , M. Perdrix
  • Institut Pierre Simon Laplace, CNRS and CEA

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

Time-resolved photoemission spectroscopy using high order harmonics is used to measure the energy relaxation rate of hot electrons in α-SiO2 with sub-picosecond time resolution. Our results indicate that electrons of a few band gap energy relax at a rate which is at least two orders of magnitude lower than the one of photo-excited carriers of a few eV. As a result, we give insight in the relaxation process of hot electrons and show that impact ionization probability per unit time is only of the order of 1/40 ps-1, in very strong contrast with the much higher value generally assumed in models of optical breakdown.

langue originaleAnglais
Pages (de - à)270-277
Nombre de pages8
journalLaser Physics
Volume10
Numéro de publication1
étatPublié - 1 janv. 2000
Modification externeOui

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