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Energy efficient magnetic tunnel junction based hybrid LSI using multi-threshold UTBB-FD-SOI device

  • Université Paris-Saclay
  • Beihang University

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collectionContribution à une conférenceRevue par des pairs

2 Citations (Scopus)

Résumé

The energy scalability of ultra-low power nonvolatile (NV) large-scale integration (LSI) is explored in this paper. Multithreshold computing (super/near/sub-Vt) in hybrid CMOS/magnetic tunnel junction (MTJ) circuits are investigated based on SPICE-compatible MTJ model and fully depleted silicon on insulator (FD-SOI) devices. Ultra-low supply voltage operation bottlenecks associated with performance loss, parametric variations and function failure are studied in differential pair-based sensing circuit, MTJ writing/control circuit and other building blocks. A case study is performed with three typical NV-IP-ops (NV-FF), which are implemented with 28nm FD-SOI low Vt (LVT) device and forward back-bias. Results show that MTJ writing/control circuit must operate at nominal supply (super-Vt) region to guarantee MTJ switching; sensing circuit is configured with nearVt operation (0.6V) with robustness consideration, whereas other parts could be implemented with near/sub-Vt computing to achieve ultra-low power consumption and energy efficient operations.

langue originaleAnglais
titreGLSVLSI 2017 - Proceedings of the Great Lakes Symposium on VLSI 2017
EditeurAssociation for Computing Machinery
Pages23-28
Nombre de pages6
ISBN (Electronique)9781450349727
Les DOIs
étatPublié - 10 mai 2017
Modification externeOui
Evénement27th Great Lakes Symposium on VLSI, GLSVLSI 2017 - Banff, Canada
Durée: 10 mai 201712 mai 2017

Série de publications

NomProceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
VolumePart F127756

Une conférence

Une conférence27th Great Lakes Symposium on VLSI, GLSVLSI 2017
Pays/TerritoireCanada
La villeBanff
période10/05/1712/05/17

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