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Energy-Level Alignment of a Hole-Transport Organic Layer and ITO: Toward Applications for Organic Electronic Devices

  • Quentin Arnoux
  • , Anthony Boucly
  • , Vincent Barth
  • , Rabah Benbalagh
  • , Albano Cossaro
  • , Luca Floreano
  • , Mathieu Silly
  • , Fausto Sirotti
  • , Etienne Derat
  • , Stéphane Carniato
  • , Fabrice Bournel
  • , Jean Jacques Gallet
  • , Denis Fichou
  • , Ludovic Tortech
  • , François Rochet
  • Sorbonne Université
  • CEA/DSM/IRAMIS
  • Université Pierre et Marie Curie-Paris 6
  • International School for Advanced Studies (SISSA/ISAS)
  • Synchrotron SOLEIL
  • School of Physical and Mathematical Sciences

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

2,2′,6,6′-Tetraphenyl-4,4′-dipyranylidene (DIPO-Ph4) was grown by vacuum deposition on an indium tin oxide (ITO) substrate. The films were characterized by atomic force microscopy as well as synchrotron radiation UV and X-ray photoelectron spectroscopy to gain an insight into the material growth and to better understand the electronic properties of the ITO/DIPO-Ph4 interface. To interpret our spectroscopic data, we consider the formation of cationic DIPO-Ph4 at the ITO interface owing to a charge transfer from the organic layer to the substrate. Ionization energy DFT calculations of the neutral and cationic species substantiate this hypothesis. Finally, we present the energetic diagram of the ITO/DIPO-Ph4 system, and we discuss the application of this interface in various technologically relevant systems, as a hole-injector in OLEDs or as a hole-collector interfacial layer adjacent to the prototypical OPV layer P3HT:PCBM.

langue originaleAnglais
Pages (de - à)30992-31004
Nombre de pages13
journalACS Applied Materials and Interfaces
Volume9
Numéro de publication36
Les DOIs
étatPublié - 13 sept. 2017
Modification externeOui

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