Engineering twin boundaries for enhancing strength and ductility of thermoelectric semiconductor PbTe

Twin boundary engineering is a potential strategy for achieving robust mechanical properties of materials. Our previous molecular dynamics simulations indicated that the nanotwin could significantly enhance the ductility of thermoelectric (TE) semiconductors PbTe due to coherent twin boundary (CTB) migration accompanied by the ‘catching bond’ at room temperature. To further improve the mechanical strength or ductility of PbTe, we investigated the role of the shear direction, the CTB orientation and the temperature on mechanical properties of nanotwinned PbTe. Under the shear stress along [11̅0] loading direction, the partial dislocations with a/6 [12̅1] and a/6 [21̅1̅] Burgers vectors are preferentially activated on (111) twin plane with higher yield strength and ultimate shear strength than that of the (111)[112̅] slip system. The nanotwinned PbTe with CTB orientation ranging from 125° to 161° has both higher fracture strain and larger ultimate shear strength than 0° CTB orientation. This is attributed to the motion of the twinning partial dislocation significantly enhancing the ductility while the blocking of dislocations by CTBs further improving the shear strength and deformability of PbTe. Moreover, the low temperature (below 100 K) energetically enables the partial dislocation to nucleate and glide on the strong Te-CTB plane, which induces successive CTB migration along Pb- and Te-CTB planes, resulting in enhanced ductility of nanotwinned PbTe.