Enhanced in (Ga) AsGaAs quantum dot based electro-optic modulation at 1.55 μm

G. Moreau; A. Martinez; D. Y. Cong; K. Merghem; A. Miard; A. Lemàtre; P. Voisin; A. Ramdane; I. Krestnikov; A. R. Kovsh; M. Fischer; J. Koeth

doi:10.1063/1.2778759

Enhanced in (Ga) AsGaAs quantum dot based electro-optic modulation at 1.55 μm

G. Moreau
, A. Martinez
, D. Y. Cong
, K. Merghem
, A. Miard
, A. Lemàtre
, P. Voisin
, A. Ramdane
, I. Krestnikov
, A. R. Kovsh
, M. Fischer
, J. Koeth

CNRS
Innolume GmbH
Nanoplus Nanosystems and Technologies GmbH

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

15 Citations (Scopus)

Résumé

The authors report a study of the linear electro-optic coefficient in waveguides containing InGaAsGaAs quantum dots with a band gap at 1.3 μm. The Pockels effect is investigated in the 1.55 μm telecommunication window. The measured linear electro-optic coefficient for InGaAsGaAs is ∼3.4× 10-11 mV, much higher than that of the bulk or quantum well material. An ∼35% enhancement of the phase variation is achieved compared to that obtained in bulk GaAs waveguides. Finally, a spectral bandwidth of ∼100 nm is demonstrated in the 1.5-1.6 μm window.

langue originale	Anglais
Numéro d'article	091118
journal	Applied Physics Letters
Volume	91
Numéro de publication	9
Les DOIs	https://doi.org/10.1063/1.2778759
état	Publié - 10 sept. 2007

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10.1063/1.2778759

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@article{09d5fafd50204d1286edaf1a489c1dfa,

title = "Enhanced in (Ga) AsGaAs quantum dot based electro-optic modulation at 1.55 μm",

abstract = "The authors report a study of the linear electro-optic coefficient in waveguides containing InGaAsGaAs quantum dots with a band gap at 1.3 μm. The Pockels effect is investigated in the 1.55 μm telecommunication window. The measured linear electro-optic coefficient for InGaAsGaAs is ∼3.4{\texttimes} 10-11 mV, much higher than that of the bulk or quantum well material. An ∼35\% enhancement of the phase variation is achieved compared to that obtained in bulk GaAs waveguides. Finally, a spectral bandwidth of ∼100 nm is demonstrated in the 1.5-1.6 μm window.",

author = "G. Moreau and A. Martinez and Cong, \{D. Y.\} and K. Merghem and A. Miard and A. Lem{\`a}tre and P. Voisin and A. Ramdane and I. Krestnikov and Kovsh, \{A. R.\} and M. Fischer and J. Koeth",

year = "2007",

month = sep,

day = "10",

doi = "10.1063/1.2778759",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Enhanced in (Ga) AsGaAs quantum dot based electro-optic modulation at 1.55 μm

AU - Moreau, G.

AU - Martinez, A.

AU - Cong, D. Y.

AU - Merghem, K.

AU - Miard, A.

AU - Lemàtre, A.

AU - Voisin, P.

AU - Ramdane, A.

AU - Krestnikov, I.

AU - Kovsh, A. R.

AU - Fischer, M.

AU - Koeth, J.

PY - 2007/9/10

Y1 - 2007/9/10

N2 - The authors report a study of the linear electro-optic coefficient in waveguides containing InGaAsGaAs quantum dots with a band gap at 1.3 μm. The Pockels effect is investigated in the 1.55 μm telecommunication window. The measured linear electro-optic coefficient for InGaAsGaAs is ∼3.4× 10-11 mV, much higher than that of the bulk or quantum well material. An ∼35% enhancement of the phase variation is achieved compared to that obtained in bulk GaAs waveguides. Finally, a spectral bandwidth of ∼100 nm is demonstrated in the 1.5-1.6 μm window.

AB - The authors report a study of the linear electro-optic coefficient in waveguides containing InGaAsGaAs quantum dots with a band gap at 1.3 μm. The Pockels effect is investigated in the 1.55 μm telecommunication window. The measured linear electro-optic coefficient for InGaAsGaAs is ∼3.4× 10-11 mV, much higher than that of the bulk or quantum well material. An ∼35% enhancement of the phase variation is achieved compared to that obtained in bulk GaAs waveguides. Finally, a spectral bandwidth of ∼100 nm is demonstrated in the 1.5-1.6 μm window.

U2 - 10.1063/1.2778759

DO - 10.1063/1.2778759

M3 - Article

AN - SCOPUS:34548415820

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091118

ER -

Enhanced in (Ga) AsGaAs quantum dot based electro-optic modulation at 1.55 μm

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