Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Jean Maxime Sarraute; Kevin Schires; Sophie Larochelle; Frédéric Grillot

doi:10.1109/JSTQE.2015.2445876

Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Jean Maxime Sarraute
, Kevin Schires
, Sophie Larochelle
, Frédéric Grillot

Université Paris-Saclay
Centre d'Optique, Photonique et Laser

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

langue originale	Anglais
Numéro d'article	07124456
Pages (de - à)	575-582
Nombre de pages	8
journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	21
Numéro de publication	6
Les DOIs	https://doi.org/10.1109/JSTQE.2015.2445876
état	Publié - 1 nov. 2015
Modification externe	Oui

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10.1109/JSTQE.2015.2445876

Contient cette citation

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title = "Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever",

abstract = "The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.",

keywords = "Semiconductor laser, bandwidth, gain lever, modulation response, optical injection",

author = "Sarraute, \{Jean Maxime\} and Kevin Schires and Sophie Larochelle and Fr{\'e}d{\'e}ric Grillot",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = nov,

day = "1",

doi = "10.1109/JSTQE.2015.2445876",

language = "English",

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Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever. / Sarraute, Jean Maxime; Schires, Kevin; Larochelle, Sophie et al.
Dans: IEEE Journal on Selected Topics in Quantum Electronics, Vol 21, Numéro 6, 07124456, 01.11.2015, p. 575-582.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

AU - Sarraute, Jean Maxime

AU - Schires, Kevin

AU - Larochelle, Sophie

AU - Grillot, Frédéric

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

AB - The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

KW - Semiconductor laser

KW - bandwidth

KW - gain lever

KW - modulation response

KW - optical injection

U2 - 10.1109/JSTQE.2015.2445876

DO - 10.1109/JSTQE.2015.2445876

M3 - Article

AN - SCOPUS:84937232514

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VL - 21

SP - 575

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JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 6

M1 - 07124456

ER -

Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

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