Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template

M. Eddrief; Y. Wang; V. H. Etgens; D. H. Mosca; J. L. Maurice; J. M. George; A. Fert; C. Bourgognon

doi:10.1103/PhysRevB.63.094428

Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template

M. Eddrief
, Y. Wang
, V. H. Etgens
, D. H. Mosca
, J. L. Maurice
, J. M. George
, A. Fert
, C. Bourgognon

Université Pierre et Marie Curie
Université Paris-Sud
Universidade Federal Do Paraná - Setor Palotina
LTHE (UMR 5564 CNRS/IRD/Université de Grenoble)

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report the growth of Fe(111) overlayers on unstrained GaSe(001) epitaxied on a Si(111)-H terminated substrate. The GaSe prevents chemical reaction between Fe and Si and enables the achievement of fully relaxed Fe films above monolayer coverage, despite the 8% lattice mismatch between Fe and GaSe. The evolution of the magnetic properties and chemical reactivity of the iron layer has been studied as a function of thickness. The reduction of magnetization for very thin Fe films has been correlated with a self-limited solid-state reaction at the Fe/GaSe interface.

langue originale	Anglais
journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Numéro de publication	9
Les DOIs	https://doi.org/10.1103/PhysRevB.63.094428
état	Publié - 13 févr. 2001
Modification externe	Oui

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10.1103/PhysRevB.63.094428

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title = "Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template",

abstract = "We report the growth of Fe(111) overlayers on unstrained GaSe(001) epitaxied on a Si(111)-H terminated substrate. The GaSe prevents chemical reaction between Fe and Si and enables the achievement of fully relaxed Fe films above monolayer coverage, despite the 8\% lattice mismatch between Fe and GaSe. The evolution of the magnetic properties and chemical reactivity of the iron layer has been studied as a function of thickness. The reduction of magnetization for very thin Fe films has been correlated with a self-limited solid-state reaction at the Fe/GaSe interface.",

author = "M. Eddrief and Y. Wang and Etgens, \{V. H.\} and Mosca, \{D. H.\} and Maurice, \{J. L.\} and George, \{J. M.\} and A. Fert and C. Bourgognon",

year = "2001",

month = feb,

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doi = "10.1103/PhysRevB.63.094428",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template

AU - Eddrief, M.

AU - Wang, Y.

AU - Etgens, V. H.

AU - Mosca, D. H.

AU - Maurice, J. L.

AU - George, J. M.

AU - Fert, A.

AU - Bourgognon, C.

PY - 2001/2/13

Y1 - 2001/2/13

N2 - We report the growth of Fe(111) overlayers on unstrained GaSe(001) epitaxied on a Si(111)-H terminated substrate. The GaSe prevents chemical reaction between Fe and Si and enables the achievement of fully relaxed Fe films above monolayer coverage, despite the 8% lattice mismatch between Fe and GaSe. The evolution of the magnetic properties and chemical reactivity of the iron layer has been studied as a function of thickness. The reduction of magnetization for very thin Fe films has been correlated with a self-limited solid-state reaction at the Fe/GaSe interface.

AB - We report the growth of Fe(111) overlayers on unstrained GaSe(001) epitaxied on a Si(111)-H terminated substrate. The GaSe prevents chemical reaction between Fe and Si and enables the achievement of fully relaxed Fe films above monolayer coverage, despite the 8% lattice mismatch between Fe and GaSe. The evolution of the magnetic properties and chemical reactivity of the iron layer has been studied as a function of thickness. The reduction of magnetization for very thin Fe films has been correlated with a self-limited solid-state reaction at the Fe/GaSe interface.

U2 - 10.1103/PhysRevB.63.094428

DO - 10.1103/PhysRevB.63.094428

M3 - Article

AN - SCOPUS:4243216904

SN - 1098-0121

VL - 63

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 9

ER -

Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template

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