EPR on radiation-induced defects in SiO2

Antonino Alessi; Simonpietro Agnello; Gianpiero Buscarino; Yuanming Pan; Rudolf I. Mashkovtsev

doi:10.1007/978-3-319-09216-4_7

EPR on radiation-induced defects in SiO₂

Antonino Alessi
, Simonpietro Agnello
, Gianpiero Buscarino
, Yuanming Pan
, Rudolf I. Mashkovtsev

University of Palermo
University of Saskatchewan
V.S. Sobolev Institute of Geology and Mineralogy of the Siberian Branch of the RAS

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Chapitre › Revue par des pairs

31 Citations (Scopus)

Résumé

Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO₂) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO₂ (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO₂), although significant differences are common.

langue originale	Anglais
titre	Applications of EPR in Radiation Research
Editeur	Springer International Publishing
Pages	255-295
Nombre de pages	41
ISBN (Electronique)	9783319092164
ISBN (imprimé)	3319092154, 9783319092157
Les DOIs	https://doi.org/10.1007/978-3-319-09216-4_7
état	Publié - 1 juin 2014
Modification externe	Oui

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10.1007/978-3-319-09216-4_7

Contient cette citation

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title = "EPR on radiation-induced defects in SiO2",

abstract = "Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.",

keywords = "Coordinate system, Dynamic properties, Electronic structures, Impurity defects, Multi-frequency EPR, Oxygen vacancy, Pulse ENDOR, Pulse ESEEM, Silicon vacancy, Single-crystal and glass EPR",

author = "Antonino Alessi and Simonpietro Agnello and Gianpiero Buscarino and Yuanming Pan and Mashkovtsev, \{Rudolf I.\}",

year = "2014",

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doi = "10.1007/978-3-319-09216-4\_7",

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T1 - EPR on radiation-induced defects in SiO2

AU - Alessi, Antonino

AU - Agnello, Simonpietro

AU - Buscarino, Gianpiero

AU - Pan, Yuanming

AU - Mashkovtsev, Rudolf I.

PY - 2014/6/1

Y1 - 2014/6/1

N2 - Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.

AB - Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.

KW - Coordinate system

KW - Dynamic properties

KW - Electronic structures

KW - Impurity defects

KW - Multi-frequency EPR

KW - Oxygen vacancy

KW - Pulse ENDOR

KW - Pulse ESEEM

KW - Silicon vacancy

KW - Single-crystal and glass EPR

U2 - 10.1007/978-3-319-09216-4_7

DO - 10.1007/978-3-319-09216-4_7

M3 - Chapter

AN - SCOPUS:84930369292

SN - 3319092154

SN - 9783319092157

SP - 255

EP - 295

BT - Applications of EPR in Radiation Research

PB - Springer International Publishing

ER -

EPR on radiation-induced defects in SiO2

Résumé

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Contient cette citation

EPR on radiation-induced defects in SiO₂