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Evidence for atomic mixing induced in metallic bilayers by electronic energy deposition

  • R. Leguay
  • , A. Dunlop
  • , F. Dunstetter
  • , N. Lorenzelli
  • , A. Braslau
  • , F. Bridou
  • , J. Corno
  • , B. Pardo
  • , J. Chevallier
  • , C. Colliex
  • , A. Menelle
  • , J. L. Rouvière
  • , L. Thomé
  • Laboratoire des Solides Irradiés
  • Université Paris-Saclay
  • Université Paris-Sud
  • Aarhus University
  • Laboratoire de Physique des Solides
  • CEA/UVSQ/CNRS
  • Univ. Joseph Fourier-Grenoble 1
  • Université Paris-Sud

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

High levels of energy deposition by electronic excitations can induce damage creation in some bulk metallic targets as soon as the rate of energy deposition in electronic excitation is higher than a few 10 keV/nm. The present study is aimed at determining whether such excitations can also induce interdiffusion at the interface of metallic bilayers. Ni/Ti bilayers were irradiated at 80 K with GeV Pb, Ta and U ions up to a few 1013 ions/cm2. Damage creation and mixing were followed using various methods: electrical resistance, grazing X-ray and neutron reflectometry, X-ray diffraction, electron microscopy and electron energy loss on target cross-sections. A very strong mixing is indeed observed at the Ni/Ti interface as a result of electronic energy deposition: the observed mixing efficiency is at least two orders of magnitude higher than that induced by elastic collisions with target nuclei. We finally study the influence of various parameters (irradiation temperature, symetry of the interface) on the mixing efficiency and follow the kinetics of the mixing process.

langue originaleAnglais
Pages (de - à)481-502
Nombre de pages22
journalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume122
Numéro de publication3
Les DOIs
étatPublié - 1 janv. 1997

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