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Evidence for flat bands near the Fermi level in epitaxial rhombohedral multilayer graphene

  • Debora Pierucci
  • , Haikel Sediri
  • , Mahdi Hajlaoui
  • , Jean Christophe Girard
  • , Thomas Brumme
  • , Matteo Calandra
  • , Emilio Velez-Fort
  • , Gilles Patriarche
  • , Mathieu G. Silly
  • , Gabriel Ferro
  • , Véronique Soulière
  • , Massimiliano Marangolo
  • , Fausto Sirotti
  • , Francesco Mauri
  • , Abdelkarim Ouerghi
  • Centre de Nanosciences et de Nanotechnologies
  • Synchrotron SOLEIL
  • Université Pierre et Marie Curie
  • Laboratoire des Multimatériaux et Interfaces
  • CNRS, UMR 7588, INSP

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.

langue originaleAnglais
Pages (de - à)5432-5439
Nombre de pages8
journalACS Nano
Volume9
Numéro de publication5
Les DOIs
étatPublié - 26 mai 2015
Modification externeOui

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