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Evidence for thermodynamically stable p/n junction, formed by Ag doping of (Hg,Cd) Te

  • Weizmann Institute of Science Israel
  • Technion - Israel Institute of Technology
  • CNRS Lab. Phys. Solides de Bellevue

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

6 Citations (Scopus)

Résumé

A p-n junction is a stable situation for electronic carriers, but not for those dopants that are the cause of the junction. Thus the junction is stabilized only kinetically against equilibration of the dopant concentrations due to the electrical and chemical potential gradients that reign in the depletion regions that are associated with the junction. The situation changes, though, when a dopant can be present in two forms, with opposite effective charges, with the majority form being responsible for doping and the minority one for drifting. Then the electrical potential gradient can actually stabilize the junction. Ag, which acts as an acceptor in (Hg,Cd)Te, is an example of such a dopant. Silver creates a p-n junction in Cd-rich n-(Hg,Cd)Te. We show that this junction is capable of restoring itself after being smeared out by small electrical or thermal perturbations. This behaviour 'suggests that we have a thermodynamically, rather than a kinetically stabilized junction. It indicates that Ag dissolution in MCT strongly deviates from ideal behaviour. Reasons for this non-ideality are suggested.

langue originaleAnglais
Pages (de - à)90-93
Nombre de pages4
journalJournal of Crystal Growth
Volume161
Numéro de publication1-4
Les DOIs
étatPublié - 1 janv. 1996
Modification externeOui

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