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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

  • Daniel J. Myers
  • , Andrew C. Espenlaub
  • , Kristina Gelzinyte
  • , Erin C. Young
  • , Lucio Martinelli
  • , Jacques Peretti
  • , Claude Weisbuch
  • , James S. Speck
  • University of California
  • Vilnius University

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.

langue originaleAnglais
Numéro d'article091102
journalApplied Physics Letters
Volume116
Numéro de publication9
Les DOIs
étatPublié - 2 mars 2020

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