Résumé
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
| langue originale | Anglais |
|---|---|
| Numéro d'article | 091102 |
| journal | Applied Physics Letters |
| Volume | 116 |
| Numéro de publication | 9 |
| Les DOIs | |
| état | Publié - 2 mars 2020 |
Empreinte digitale
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