Exciton radiative lifetime controlled by the lateral confinement energy in a single quantum dot

J. Hours; P. Senellart; E. Peter; A. Cavanna; J. Bloch

doi:10.1103/PhysRevB.71.161306

Exciton radiative lifetime controlled by the lateral confinement energy in a single quantum dot

J. Hours
, P. Senellart
, E. Peter
, A. Cavanna
, J. Bloch

École Polytechnique

CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report on time-resolved measurements on single GaAs quantum dots formed at the interface fluctuation of a GaAs/AlGaAs quantum well. We measure exciton radiative lifetimes as short as 100 ps, demonstrating that monolayer fluctuation quantum dots have larger oscillator strength than any other III-V or II-VI semiconductor quantum dots. Studying various single quantum dots, we demonstrate that the oscillator strength of a quantum dot is controlled by its lateral confinement energy.

langue originale	Anglais
Numéro d'article	161306
journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Numéro de publication	16
Les DOIs	https://doi.org/10.1103/PhysRevB.71.161306
état	Publié - 14 déc. 2005

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10.1103/PhysRevB.71.161306

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@article{18386f83b0d947e3a0e709a068895e95,

title = "Exciton radiative lifetime controlled by the lateral confinement energy in a single quantum dot",

abstract = "We report on time-resolved measurements on single GaAs quantum dots formed at the interface fluctuation of a GaAs/AlGaAs quantum well. We measure exciton radiative lifetimes as short as 100 ps, demonstrating that monolayer fluctuation quantum dots have larger oscillator strength than any other III-V or II-VI semiconductor quantum dots. Studying various single quantum dots, we demonstrate that the oscillator strength of a quantum dot is controlled by its lateral confinement energy.",

author = "J. Hours and P. Senellart and E. Peter and A. Cavanna and J. Bloch",

year = "2005",

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doi = "10.1103/PhysRevB.71.161306",

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AU - Hours, J.

AU - Senellart, P.

AU - Peter, E.

AU - Cavanna, A.

AU - Bloch, J.

PY - 2005/12/14

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N2 - We report on time-resolved measurements on single GaAs quantum dots formed at the interface fluctuation of a GaAs/AlGaAs quantum well. We measure exciton radiative lifetimes as short as 100 ps, demonstrating that monolayer fluctuation quantum dots have larger oscillator strength than any other III-V or II-VI semiconductor quantum dots. Studying various single quantum dots, we demonstrate that the oscillator strength of a quantum dot is controlled by its lateral confinement energy.

AB - We report on time-resolved measurements on single GaAs quantum dots formed at the interface fluctuation of a GaAs/AlGaAs quantum well. We measure exciton radiative lifetimes as short as 100 ps, demonstrating that monolayer fluctuation quantum dots have larger oscillator strength than any other III-V or II-VI semiconductor quantum dots. Studying various single quantum dots, we demonstrate that the oscillator strength of a quantum dot is controlled by its lateral confinement energy.

U2 - 10.1103/PhysRevB.71.161306

DO - 10.1103/PhysRevB.71.161306

M3 - Article

AN - SCOPUS:28644440154

SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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M1 - 161306

ER -

Exciton radiative lifetime controlled by the lateral confinement energy in a single quantum dot

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