Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors

J. F. Lampin; F. X. Camescasse; A. Alexandrou; M. Bonitz; V. Thierry-Mieg

doi:10.1103/PhysRevB.60.R8453

Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors

J. F. Lampin
, F. X. Camescasse
, A. Alexandrou
, M. Bonitz
, V. Thierry-Mieg

CNRS
Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN)
Universität Rostock

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

7 Citations (Scopus)

Résumé

We demonstrate experimentally the role of preexisting populations on the relaxation of nonequilibrium carriers in bulk semiconductors: A substantial acceleration is observed for cold preexcited carriers and a slowing down for hot equilibrium carriers. Experiments in doped samples show that holes are predominantly responsible for the acceleration of the thermalization. The observed acceleration (slowing down) is readily explained by favorable (unfavorable) conditions for the excitation of weakly damped nonequilibrium acoustic plasmons.

langue originale	Anglais
Pages (de - à)	R8453-R8456
journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Numéro de publication	12
Les DOIs	https://doi.org/10.1103/PhysRevB.60.R8453
état	Publié - 1 janv. 1999

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10.1103/PhysRevB.60.R8453

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title = "Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors",

abstract = "We demonstrate experimentally the role of preexisting populations on the relaxation of nonequilibrium carriers in bulk semiconductors: A substantial acceleration is observed for cold preexcited carriers and a slowing down for hot equilibrium carriers. Experiments in doped samples show that holes are predominantly responsible for the acceleration of the thermalization. The observed acceleration (slowing down) is readily explained by favorable (unfavorable) conditions for the excitation of weakly damped nonequilibrium acoustic plasmons.",

author = "Lampin, \{J. F.\} and Camescasse, \{F. X.\} and A. Alexandrou and M. Bonitz and V. Thierry-Mieg",

year = "1999",

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doi = "10.1103/PhysRevB.60.R8453",

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Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors. / Lampin, J. F.; Camescasse, F. X.; Alexandrou, A. et al.
Dans: Physical Review B - Condensed Matter and Materials Physics, Vol 60, Numéro 12, 01.01.1999, p. R8453-R8456.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors

AU - Lampin, J. F.

AU - Camescasse, F. X.

AU - Alexandrou, A.

AU - Bonitz, M.

AU - Thierry-Mieg, V.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We demonstrate experimentally the role of preexisting populations on the relaxation of nonequilibrium carriers in bulk semiconductors: A substantial acceleration is observed for cold preexcited carriers and a slowing down for hot equilibrium carriers. Experiments in doped samples show that holes are predominantly responsible for the acceleration of the thermalization. The observed acceleration (slowing down) is readily explained by favorable (unfavorable) conditions for the excitation of weakly damped nonequilibrium acoustic plasmons.

AB - We demonstrate experimentally the role of preexisting populations on the relaxation of nonequilibrium carriers in bulk semiconductors: A substantial acceleration is observed for cold preexcited carriers and a slowing down for hot equilibrium carriers. Experiments in doped samples show that holes are predominantly responsible for the acceleration of the thermalization. The observed acceleration (slowing down) is readily explained by favorable (unfavorable) conditions for the excitation of weakly damped nonequilibrium acoustic plasmons.

U2 - 10.1103/PhysRevB.60.R8453

DO - 10.1103/PhysRevB.60.R8453

M3 - Article

AN - SCOPUS:4243851196

SN - 1098-0121

VL - 60

SP - R8453-R8456

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

ER -

Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors

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