Résumé
Information on the incorporation of hydrogen and its effects on the disorder and the defects in undoped PECVD a-Si:H films deposited under different conditions is gained from systematicannealing studies up to 500-600°C. The results reveal a better bonded hydrogen stability in he samples deposited at high rate, related to their particular microstructure.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 285-288 |
| Nombre de pages | 4 |
| journal | Journal of Non-Crystalline Solids |
| Volume | 164-166 |
| Numéro de publication | PART 1 |
| Les DOIs | |
| état | Publié - 2 déc. 1993 |
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