Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

M. Eddrief; M. Marangolo; S. Corlevi; G. M. Guichar; V. H. Etgens; R. Mattana; D. H. Mosca; F. Sirotti

doi:10.1063/1.1526170

Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

M. Eddrief
, M. Marangolo
, S. Corlevi
, G. M. Guichar
, V. H. Etgens
, R. Mattana
, D. H. Mosca
, F. Sirotti

Université Pierre et Marie Curie
Université Paris-Sud
Universidade Federal Do Paraná - Setor Palotina
Université Paris-Saclay

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.

langue originale	Anglais
Pages (de - à)	4553-4555
Nombre de pages	3
journal	Applied Physics Letters
Volume	81
Numéro de publication	24
Les DOIs	https://doi.org/10.1063/1.1526170
état	Publié - 9 déc. 2002
Modification externe	Oui

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10.1063/1.1526170

Contient cette citation

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title = "Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission",

abstract = "The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.",

author = "M. Eddrief and M. Marangolo and S. Corlevi and Guichar, \{G. M.\} and Etgens, \{V. H.\} and R. Mattana and Mosca, \{D. H.\} and F. Sirotti",

year = "2002",

month = dec,

day = "9",

doi = "10.1063/1.1526170",

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volume = "81",

pages = "4553--4555",

journal = "Applied Physics Letters",

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T1 - Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

AU - Eddrief, M.

AU - Marangolo, M.

AU - Corlevi, S.

AU - Guichar, G. M.

AU - Etgens, V. H.

AU - Mattana, R.

AU - Mosca, D. H.

AU - Sirotti, F.

PY - 2002/12/9

Y1 - 2002/12/9

N2 - The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.

AB - The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.

U2 - 10.1063/1.1526170

DO - 10.1063/1.1526170

M3 - Article

AN - SCOPUS:0037049571

SN - 0003-6951

VL - 81

SP - 4553

EP - 4555

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

Résumé

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