First demonstration of a 1.52 νm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer

E. Homeyer; R. Piron; F. Grillot; O. Dehaese; K. Tavernier; E. MacÉ; A. Le Corre; S. Loualiche

doi:10.1088/0268-1242/22/7/028

First demonstration of a 1.52 νm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer

E. Homeyer
, R. Piron
, F. Grillot
, O. Dehaese
, K. Tavernier
, E. MacÉ
, A. Le Corre
, S. Loualiche

Institut FOTON-UMR6082

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

This paper presents experimental results obtained on a laser structure containing a single QD layer, epitaxially grown on InP(3 1 1)B substrate. The sample shows laser emission on the ground state in the 1.55 νm telecommunication window at room temperature. Its threshold current density is 320 A cm^-2, which is relatively low for an InP-based QD laser. Its modal gain, attributed to a high QD density and low QD size dispersion, explains this first achievement of lasing with a single QD layer on an InP substrate.

langue originale	Anglais
Numéro d'article	028
Pages (de - à)	827-830
Nombre de pages	4
journal	Semiconductor Science and Technology
Volume	22
Numéro de publication	7
Les DOIs	https://doi.org/10.1088/0268-1242/22/7/028
état	Publié - 1 juil. 2007
Modification externe	Oui

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10.1088/0268-1242/22/7/028

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title = "First demonstration of a 1.52 νm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer",

abstract = "This paper presents experimental results obtained on a laser structure containing a single QD layer, epitaxially grown on InP(3 1 1)B substrate. The sample shows laser emission on the ground state in the 1.55 νm telecommunication window at room temperature. Its threshold current density is 320 A cm-2, which is relatively low for an InP-based QD laser. Its modal gain, attributed to a high QD density and low QD size dispersion, explains this first achievement of lasing with a single QD layer on an InP substrate.",

author = "E. Homeyer and R. Piron and F. Grillot and O. Dehaese and K. Tavernier and E. Mac{\'E} and \{Le Corre\}, A. and S. Loualiche",

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doi = "10.1088/0268-1242/22/7/028",

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T1 - First demonstration of a 1.52 νm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer

AU - Homeyer, E.

AU - Piron, R.

AU - Grillot, F.

AU - Dehaese, O.

AU - Tavernier, K.

AU - MacÉ, E.

AU - Le Corre, A.

AU - Loualiche, S.

PY - 2007/7/1

Y1 - 2007/7/1

N2 - This paper presents experimental results obtained on a laser structure containing a single QD layer, epitaxially grown on InP(3 1 1)B substrate. The sample shows laser emission on the ground state in the 1.55 νm telecommunication window at room temperature. Its threshold current density is 320 A cm-2, which is relatively low for an InP-based QD laser. Its modal gain, attributed to a high QD density and low QD size dispersion, explains this first achievement of lasing with a single QD layer on an InP substrate.

AB - This paper presents experimental results obtained on a laser structure containing a single QD layer, epitaxially grown on InP(3 1 1)B substrate. The sample shows laser emission on the ground state in the 1.55 νm telecommunication window at room temperature. Its threshold current density is 320 A cm-2, which is relatively low for an InP-based QD laser. Its modal gain, attributed to a high QD density and low QD size dispersion, explains this first achievement of lasing with a single QD layer on an InP substrate.

UR - https://www.scopus.com/pages/publications/34547337716

U2 - 10.1088/0268-1242/22/7/028

DO - 10.1088/0268-1242/22/7/028

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SN - 0268-1242

VL - 22

SP - 827

EP - 830

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 028

ER -

First demonstration of a 1.52 νm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer

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