Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications

Beatrice Dagens; Anthony Martinez; Dalila Make; Odile Le Gouezigou; Jean Guy Provost; Vincent Sallet; Kamel Merghem; Jean Christophe Harmand; Abderrahim Ramdane; Bruno Thedrez

doi:10.1109/LPT.2005.845718

Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications

Beatrice Dagens
, Anthony Martinez
, Dalila Make
, Odile Le Gouezigou
, Jean Guy Provost
, Vincent Sallet
, Kamel Merghem
, Jean Christophe Harmand
, Abderrahim Ramdane
, Bruno Thedrez

Alcatel-Thales III-V Laboratory
CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T_o. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 °C-85 °C. Besides transmission is demonstrated up to 10 Gb/s at 25 °C on the same fiber, without penalty and bit-error-rate floor.

langue originale	Anglais
Pages (de - à)	971-973
Nombre de pages	3
journal	IEEE Photonics Technology Letters
Volume	17
Numéro de publication	5
Les DOIs	https://doi.org/10.1109/LPT.2005.845718
état	Publié - 1 mai 2005

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10.1109/LPT.2005.845718

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@article{ede9f5d6b8de4240b7a36e696483a607,

title = "Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications",

abstract = "Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high To. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 °C-85 °C. Besides transmission is demonstrated up to 10 Gb/s at 25 °C on the same fiber, without penalty and bit-error-rate floor.",

keywords = "Characteristic temperature T, GaInNAs, Metropolitan area networks, Optical communication, Semiconductor lasers",

author = "Beatrice Dagens and Anthony Martinez and Dalila Make and \{Le Gouezigou\}, Odile and Provost, \{Jean Guy\} and Vincent Sallet and Kamel Merghem and Harmand, \{Jean Christophe\} and Abderrahim Ramdane and Bruno Thedrez",

year = "2005",

month = may,

day = "1",

doi = "10.1109/LPT.2005.845718",

language = "English",

volume = "17",

pages = "971--973",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

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TY - JOUR

T1 - Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications

AU - Dagens, Beatrice

AU - Martinez, Anthony

AU - Make, Dalila

AU - Le Gouezigou, Odile

AU - Provost, Jean Guy

AU - Sallet, Vincent

AU - Merghem, Kamel

AU - Harmand, Jean Christophe

AU - Ramdane, Abderrahim

AU - Thedrez, Bruno

PY - 2005/5/1

Y1 - 2005/5/1

N2 - Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high To. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 °C-85 °C. Besides transmission is demonstrated up to 10 Gb/s at 25 °C on the same fiber, without penalty and bit-error-rate floor.

AB - Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high To. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 °C-85 °C. Besides transmission is demonstrated up to 10 Gb/s at 25 °C on the same fiber, without penalty and bit-error-rate floor.

KW - Characteristic temperature T

KW - GaInNAs

KW - Metropolitan area networks

KW - Optical communication

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/21044457789

U2 - 10.1109/LPT.2005.845718

DO - 10.1109/LPT.2005.845718

M3 - Article

AN - SCOPUS:21044457789

SN - 1041-1135

VL - 17

SP - 971

EP - 973

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications

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