GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

V. L. Berkovits; V. P. Ulin; O. E. Tereshchenko; D. Paget; A. C.H. Rowe; P. Chiaradia; B. P. Doyle; S. Nannarone

doi:10.1103/PhysRevB.80.233303

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

V. L. Berkovits
, V. P. Ulin
, O. E. Tereshchenko
, D. Paget
, A. C.H. Rowe
, P. Chiaradia
, B. P. Doyle
, S. Nannarone

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS^- and OH^- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

langue originale	Anglais
Numéro d'article	233303
journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Numéro de publication	23
Les DOIs	https://doi.org/10.1103/PhysRevB.80.233303
état	Publié - 18 déc. 2009

Accès au document

10.1103/PhysRevB.80.233303

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

Berkovits, V. L., Ulin, V. P., Tereshchenko, O. E., Paget, D., Rowe, A. C. H., Chiaradia, P., Doyle, B. P., & Nannarone, S. (2009). GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes. Physical Review B - Condensed Matter and Materials Physics, 80(23), Article 233303. https://doi.org/10.1103/PhysRevB.80.233303

@article{e68e542dc9b3473bbcd02abdab4bd767,

title = "GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes",

abstract = "Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.",

author = "Berkovits, \{V. L.\} and Ulin, \{V. P.\} and Tereshchenko, \{O. E.\} and D. Paget and Rowe, \{A. C.H.\} and P. Chiaradia and Doyle, \{B. P.\} and S. Nannarone",

year = "2009",

month = dec,

day = "18",

doi = "10.1103/PhysRevB.80.233303",

language = "English",

volume = "80",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

number = "23",

}

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes. / Berkovits, V. L.; Ulin, V. P.; Tereshchenko, O. E. et al.
Dans: Physical Review B - Condensed Matter and Materials Physics, Vol 80, Numéro 23, 233303, 18.12.2009.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - GaAs(111) A and B surfaces in hydrazine sulfide solutions

T2 - Extreme polarity dependence of surface adsorption processes

AU - Berkovits, V. L.

AU - Ulin, V. P.

AU - Tereshchenko, O. E.

AU - Paget, D.

AU - Rowe, A. C.H.

AU - Chiaradia, P.

AU - Doyle, B. P.

AU - Nannarone, S.

PY - 2009/12/18

Y1 - 2009/12/18

N2 - Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

AB - Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

UR - https://www.scopus.com/pages/publications/77954740921

U2 - 10.1103/PhysRevB.80.233303

DO - 10.1103/PhysRevB.80.233303

M3 - Article

AN - SCOPUS:77954740921

SN - 1098-0121

VL - 80

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

M1 - 233303

ER -

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

Résumé

Accès au document

Autres fichiers et liens

Empreinte digitale

Contient cette citation