Guided growth of in-plane silicon nanowires

Linwei Yu; Maher Oudwan; Oumkelthoum Moustapha; Franck Fortuna; Pere Roca I Cabarrocas

doi:10.1063/1.3227667

Guided growth of in-plane silicon nanowires

Linwei Yu
, Maher Oudwan
, Oumkelthoum Moustapha
, Franck Fortuna
, Pere Roca I Cabarrocas

Institut polytechnique de Paris
Université Paris-Saclay

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

52 Citations (Scopus)

Résumé

We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.

langue originale	Anglais
Numéro d'article	113106
journal	Applied Physics Letters
Volume	95
Numéro de publication	11
Les DOIs	https://doi.org/10.1063/1.3227667
état	Publié - 5 oct. 2009

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10.1063/1.3227667

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title = "Guided growth of in-plane silicon nanowires",

abstract = "We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.",

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AU - Oudwan, Maher

AU - Moustapha, Oumkelthoum

AU - Fortuna, Franck

AU - Roca I Cabarrocas, Pere

PY - 2009/10/5

Y1 - 2009/10/5

N2 - We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.

AB - We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.

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DO - 10.1063/1.3227667

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Guided growth of in-plane silicon nanowires

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