Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode

Michaël Verdun; Benjamin Portier; Katarzyna Jaworowicz; Julien Jaeck; François Lelarge; Stéphane Guilet; Christophe Dupuis; Riad Haïdar; Fabrice Pardo; Jean Luc Pelouard

doi:10.1063/1.4941297

Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode

Michaël Verdun
, Benjamin Portier
, Katarzyna Jaworowicz
, Julien Jaeck
, François Lelarge
, Stéphane Guilet
, Christophe Dupuis
, Riad Haïdar
, Fabrice Pardo
, Jean Luc Pelouard

Université Paris-Saclay
Alcatel-Thales III-V Laboratory

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

14 Citations (Scopus)

Résumé

We investigate a resonant photodiode transferred onto a gold mirror. This comprises a backside dielectric subwavelength periodic structure and an absorbing region as thin as 90 nm. Electro-optical characterizations of individual pixels featuring focal-plane array-compatible geometries are fully explained by electro-magnetic simulations. In particular, we observe a near perfect collection of the photo-carriers and external quantum efficiency of up to 71% around 1.55 μm.

langue originale	Anglais
Numéro d'article	053501
journal	Applied Physics Letters
Volume	108
Numéro de publication	5
Les DOIs	https://doi.org/10.1063/1.4941297
état	Publié - 1 févr. 2016
Modification externe	Oui

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10.1063/1.4941297

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title = "Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode",

abstract = "We investigate a resonant photodiode transferred onto a gold mirror. This comprises a backside dielectric subwavelength periodic structure and an absorbing region as thin as 90 nm. Electro-optical characterizations of individual pixels featuring focal-plane array-compatible geometries are fully explained by electro-magnetic simulations. In particular, we observe a near perfect collection of the photo-carriers and external quantum efficiency of up to 71\% around 1.55 μm.",

author = "Micha{\"e}l Verdun and Benjamin Portier and Katarzyna Jaworowicz and Julien Jaeck and Fran{\c c}ois Lelarge and St{\'e}phane Guilet and Christophe Dupuis and Riad Ha{\"i}dar and Fabrice Pardo and Pelouard, \{Jean Luc\}",

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T1 - Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode

AU - Verdun, Michaël

AU - Portier, Benjamin

AU - Jaworowicz, Katarzyna

AU - Jaeck, Julien

AU - Lelarge, François

AU - Guilet, Stéphane

AU - Dupuis, Christophe

AU - Haïdar, Riad

AU - Pardo, Fabrice

AU - Pelouard, Jean Luc

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We investigate a resonant photodiode transferred onto a gold mirror. This comprises a backside dielectric subwavelength periodic structure and an absorbing region as thin as 90 nm. Electro-optical characterizations of individual pixels featuring focal-plane array-compatible geometries are fully explained by electro-magnetic simulations. In particular, we observe a near perfect collection of the photo-carriers and external quantum efficiency of up to 71% around 1.55 μm.

AB - We investigate a resonant photodiode transferred onto a gold mirror. This comprises a backside dielectric subwavelength periodic structure and an absorbing region as thin as 90 nm. Electro-optical characterizations of individual pixels featuring focal-plane array-compatible geometries are fully explained by electro-magnetic simulations. In particular, we observe a near perfect collection of the photo-carriers and external quantum efficiency of up to 71% around 1.55 μm.

U2 - 10.1063/1.4941297

DO - 10.1063/1.4941297

M3 - Article

AN - SCOPUS:84957093185

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053501

ER -

Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode

Résumé

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