Résumé
The widely used GW approximation for the self-energy operator of a system of interacting electrons may, in principle, be improved using an approximate vertex correction . We estimate using the local-density approximation. We report the results of a comparable series of GW calculations for the band structure of silicon, in which such a vertex correction is (i) excluded entirely, (ii) included only in the screened Coulomb interaction W, and (iii) included in both W and the expression for the self-energy. We also discuss the symmetry properties of the exact vertex correction and how they may be retained in further improvements.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 8024-8028 |
| Nombre de pages | 5 |
| journal | Physical Review B |
| Volume | 49 |
| Numéro de publication | 12 |
| Les DOIs | |
| état | Publié - 1 janv. 1994 |
Empreinte digitale
Examiner les sujets de recherche de « GW approximation for electron self-energies in semiconductors and insulators ». Ensemble, ils forment une empreinte digitale unique.Contient cette citation
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver