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GW approximation for electron self-energies in semiconductors and insulators

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Résumé

The widely used GW approximation for the self-energy operator of a system of interacting electrons may, in principle, be improved using an approximate vertex correction . We estimate using the local-density approximation. We report the results of a comparable series of GW calculations for the band structure of silicon, in which such a vertex correction is (i) excluded entirely, (ii) included only in the screened Coulomb interaction W, and (iii) included in both W and the expression for the self-energy. We also discuss the symmetry properties of the exact vertex correction and how they may be retained in further improvements.

langue originaleAnglais
Pages (de - à)8024-8028
Nombre de pages5
journalPhysical Review B
Volume49
Numéro de publication12
Les DOIs
étatPublié - 1 janv. 1994

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