High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

J. Mangeney; N. Stelmakh; A. Alexandrou; A. Shen; J. M. Lourtioz; V. Thierry-Mieg; J. L. Oudar

High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

J. Mangeney
, N. Stelmakh
, A. Alexandrou
, A. Shen
, J. M. Lourtioz
, V. Thierry-Mieg
, J. L. Oudar

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

Résumé

Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.

langue originale	Anglais
Pages	107
Nombre de pages	1
état	Publié - 1 janv. 1998
Evénement	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Durée: 14 sept. 1998 → 18 sept. 1998

Une conférence

Une conférence	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
La ville	Glasgow, Scotland
période	14/09/98 → 18/09/98

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@conference{692107c027744c3398617c07473c8f61,

title = "High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers",

abstract = "Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.",

author = "J. Mangeney and N. Stelmakh and A. Alexandrou and A. Shen and Lourtioz, \{J. M.\} and V. Thierry-Mieg and Oudar, \{J. L.\}",

year = "1998",

month = jan,

day = "1",

language = "English",

pages = "107",

note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

}

High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers. / Mangeney, J.; Stelmakh, N.; Alexandrou, A. et al.
1998. 107 Papier présenté � Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland.

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

TY - CONF

T1 - High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

AU - Mangeney, J.

AU - Stelmakh, N.

AU - Alexandrou, A.

AU - Shen, A.

AU - Lourtioz, J. M.

AU - Thierry-Mieg, V.

AU - Oudar, J. L.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.

AB - Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.

UR - https://www.scopus.com/pages/publications/0031634061

M3 - Paper

AN - SCOPUS:0031634061

SP - 107

T2 - Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98

Y2 - 14 September 1998 through 18 September 1998

ER -

High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

Résumé

Une conférence

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