High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers

Baptiste Berenguier; Nicolas Moron; Wei Zhao; Jean Francois Guillemoles; Jean Paul Kleider; Laurent Lombez

doi:10.1109/PVSC40753.2019.8980539

High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers

Baptiste Berenguier
, Nicolas Moron
, Wei Zhao
, Jean Francois Guillemoles
, Jean Paul Kleider
, Laurent Lombez

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

A new setup for recording time dependent photoluminescence signal in both transient and modulated regime was previously assembled. The modulated photoluminescence experiment was achieved in a high frequency domain (up to 10 MHz) while keeping high sensitivity. The methods can thus be applied both to silicon and thin film absorbers. A simulation program was developed for the reconstruction of the experimental data in both time resolved and frequency resolved regimes. In this work we focus on the simulation part and discuss the ability of our setup to identify the carrier recombination paths in thin film solar cells. First results confirm that it should be possible to discriminate between different mechanisms such as radiative, non-radiative recombination and trapping.

langue originale	Anglais
titre	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	352-358
Nombre de pages	7
ISBN (Electronique)	9781728104942
Les DOIs	https://doi.org/10.1109/PVSC40753.2019.8980539
état	Publié - 1 juin 2019
Evénement	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, États-Unis Durée: 16 juin 2019 → 21 juin 2019

Série de publications

Nom	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (imprimé)	0160-8371

Une conférence

Une conférence	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Pays/Territoire	États-Unis
La ville	Chicago
période	16/06/19 → 21/06/19

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10.1109/PVSC40753.2019.8980539

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Berenguier, B., Moron, N., Zhao, W., Guillemoles, J. F., Kleider, J. P., & Lombez, L. (2019). High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers. Dans 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (p. 352-358). Article 8980539 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980539

Berenguier, Baptiste ; Moron, Nicolas ; Zhao, Wei et al. / High-Frequency Modulated Photoluminescence : A simulation study of cases describing the signature of carrier recombination and trap centers. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 352-358 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers",

abstract = "A new setup for recording time dependent photoluminescence signal in both transient and modulated regime was previously assembled. The modulated photoluminescence experiment was achieved in a high frequency domain (up to 10 MHz) while keeping high sensitivity. The methods can thus be applied both to silicon and thin film absorbers. A simulation program was developed for the reconstruction of the experimental data in both time resolved and frequency resolved regimes. In this work we focus on the simulation part and discuss the ability of our setup to identify the carrier recombination paths in thin film solar cells. First results confirm that it should be possible to discriminate between different mechanisms such as radiative, non-radiative recombination and trapping.",

keywords = "charge carrier lifetime, photoluminescence, photovoltaic cells, semiconductor recombination, thin films absorbers",

author = "Baptiste Berenguier and Nicolas Moron and Wei Zhao and Guillemoles, \{Jean Francois\} and Kleider, \{Jean Paul\} and Laurent Lombez",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/PVSC40753.2019.8980539",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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Berenguier, B, Moron, N, Zhao, W, Guillemoles, JF, Kleider, JP & Lombez, L 2019, High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers. Dans 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980539, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., p. 352-358, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, États-Unis, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980539

High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers. / Berenguier, Baptiste; Moron, Nicolas; Zhao, Wei et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 352-358 8980539 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - High-Frequency Modulated Photoluminescence

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

AU - Berenguier, Baptiste

AU - Moron, Nicolas

AU - Zhao, Wei

AU - Guillemoles, Jean Francois

AU - Kleider, Jean Paul

AU - Lombez, Laurent

PY - 2019/6/1

Y1 - 2019/6/1

N2 - A new setup for recording time dependent photoluminescence signal in both transient and modulated regime was previously assembled. The modulated photoluminescence experiment was achieved in a high frequency domain (up to 10 MHz) while keeping high sensitivity. The methods can thus be applied both to silicon and thin film absorbers. A simulation program was developed for the reconstruction of the experimental data in both time resolved and frequency resolved regimes. In this work we focus on the simulation part and discuss the ability of our setup to identify the carrier recombination paths in thin film solar cells. First results confirm that it should be possible to discriminate between different mechanisms such as radiative, non-radiative recombination and trapping.

AB - A new setup for recording time dependent photoluminescence signal in both transient and modulated regime was previously assembled. The modulated photoluminescence experiment was achieved in a high frequency domain (up to 10 MHz) while keeping high sensitivity. The methods can thus be applied both to silicon and thin film absorbers. A simulation program was developed for the reconstruction of the experimental data in both time resolved and frequency resolved regimes. In this work we focus on the simulation part and discuss the ability of our setup to identify the carrier recombination paths in thin film solar cells. First results confirm that it should be possible to discriminate between different mechanisms such as radiative, non-radiative recombination and trapping.

KW - charge carrier lifetime

KW - photoluminescence

KW - photovoltaic cells

KW - semiconductor recombination

KW - thin films absorbers

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AN - SCOPUS:85081547734

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

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Berenguier B, Moron N, Zhao W, Guillemoles JF, Kleider JP, Lombez L. High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers. Dans 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 352-358. 8980539. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980539

High-Frequency Modulated Photoluminescence: A simulation study of cases describing the signature of carrier recombination and trap centers

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SDG des Nations Unies

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