@inproceedings{a7dffb3a65634ec08a330df21f4be1ed,
title = "High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM",
abstract = "We report the successful growth of 9- and 12- layer InAs/InP Quantum Dash in-a-well (DWELL) laser structures using GSMBE. The performances of broad area (BA) lasers emitting at 1.55 μm are compared to those of devices made from 6-layer stacks. The impact of stacking on the modal gain and T0 is investigated. The p-doping effect on the temperature stability is also discussed. Single ridge waveguide laser performance is finally reported.",
author = "G. Moreau and K. Merghem and D. Cong and G. Patriarche and F. Lelarge and B. Rousseau and B. Dagens and F. Poingt and A. Accard and F. Pommereau and A. Ramdane",
year = "2006",
month = dec,
day = "1",
language = "English",
isbn = "0780395581",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "411--414",
booktitle = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings",
note = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",
}