High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)

M. El Kazzi; M. Silly; F. Sirotti; C. Merckling; G. Saint-Girons; G. Grenet; G. Holliger

doi:10.1109/18.256507

High oxidation state at the epitaxial interface of γ-Al₂O₃ thin films grown on Si(111) and Si(001)

M. El Kazzi
, M. Silly
, F. Sirotti
, C. Merckling
, G. Saint-Girons
, G. Grenet
, G. Holliger

Synchrotron SOLEIL
Imec
Université de Lyon

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

High resolution synchrotron radiation x-ray photoelectron spectroscopy allowed us to identify the chemical bonding at the interface between epitaxial γ-Al_2O₃ and Si substrate. The experiments were performed on 1 nm thick epitaxial γ-Al_2O₃ layers grown on both Si(lll) and Si(001) substrates. In both cases, the Si 2p core level decomposition recorded at photon energy of 160 eV provided evidence for the absence of Si²⁺ and Si³⁺ species and the presence of two different Si⁴⁺ species. A microscopic model is proposed for the interface obtained with two incomplete SiO₂ planes based on the Si 2p_3/2line shape.

langue originale	Anglais
Pages (de - à)	1014-1022
Nombre de pages	9
journal	IEEE Transactions on Information Theory
Volume	39
Numéro de publication	3
Les DOIs	https://doi.org/10.1109/18.256507
état	Publié - 1 janv. 1993
Modification externe	Oui

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10.1109/18.256507

Contient cette citation

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title = "High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)",

abstract = "High resolution synchrotron radiation x-ray photoelectron spectroscopy allowed us to identify the chemical bonding at the interface between epitaxial γ-Al2O3 and Si substrate. The experiments were performed on 1 nm thick epitaxial γ-Al2O3 layers grown on both Si(lll) and Si(001) substrates. In both cases, the Si 2p core level decomposition recorded at photon energy of 160 eV provided evidence for the absence of Si2+ and Si3+ species and the presence of two different Si4+ species. A microscopic model is proposed for the interface obtained with two incomplete SiO2 planes based on the Si 2p3/2line shape.",

author = "Kazzi, \{M. El\} and M. Silly and F. Sirotti and C. Merckling and G. Saint-Girons and G. Grenet and G. Holliger",

year = "1993",

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T1 - High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)

AU - Kazzi, M. El

AU - Silly, M.

AU - Sirotti, F.

AU - Merckling, C.

AU - Saint-Girons, G.

AU - Grenet, G.

AU - Holliger, G.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - High resolution synchrotron radiation x-ray photoelectron spectroscopy allowed us to identify the chemical bonding at the interface between epitaxial γ-Al2O3 and Si substrate. The experiments were performed on 1 nm thick epitaxial γ-Al2O3 layers grown on both Si(lll) and Si(001) substrates. In both cases, the Si 2p core level decomposition recorded at photon energy of 160 eV provided evidence for the absence of Si2+ and Si3+ species and the presence of two different Si4+ species. A microscopic model is proposed for the interface obtained with two incomplete SiO2 planes based on the Si 2p3/2line shape.

AB - High resolution synchrotron radiation x-ray photoelectron spectroscopy allowed us to identify the chemical bonding at the interface between epitaxial γ-Al2O3 and Si substrate. The experiments were performed on 1 nm thick epitaxial γ-Al2O3 layers grown on both Si(lll) and Si(001) substrates. In both cases, the Si 2p core level decomposition recorded at photon energy of 160 eV provided evidence for the absence of Si2+ and Si3+ species and the presence of two different Si4+ species. A microscopic model is proposed for the interface obtained with two incomplete SiO2 planes based on the Si 2p3/2line shape.

U2 - 10.1109/18.256507

DO - 10.1109/18.256507

M3 - Article

AN - SCOPUS:84948603693

SN - 0018-9448

VL - 39

SP - 1014

EP - 1022

JO - IEEE Transactions on Information Theory

JF - IEEE Transactions on Information Theory

IS - 3

ER -

High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)

Résumé

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Contient cette citation

High oxidation state at the epitaxial interface of γ-Al₂O₃ thin films grown on Si(111) and Si(001)