Passer à la navigation principale Passer à la recherche Passer au contenu principal

High precision measurement of the 32SH electron affinity by laser detachment microscopy

  • Laboratoire Aimé Cotton

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The photodetachment microscopy technique, which was previously used with the OH- molecular anion, is applied successfully to the SH- ion with a single-mode dye laser. The interferograms of two rotational thresholds corresponding to particular detachment transitions of the SH-(X1Σ+; v = 0) → SH(X2Π3/2, 1/2;v = 0) band have been recorded. With a double-pass scheme of the laser excitation on the ion beam, pairs of interference patterns are obtained, the 2D fitting of which provides us with a new recommendable value of the electron affinity of 32SH, eA = 18669.543(12) cm-1, i.e., 2.3147282(17) eV. The precision on the determination of eA has been increased by three orders of magnitude in comparison with the previous 1981 determination retained by the most recent review on molecular electron affinities.

langue originaleAnglais
Pages (de - à)11-15
Nombre de pages5
journalJournal of Molecular Spectroscopy
Volume239
Numéro de publication1
Les DOIs
étatPublié - 1 sept. 2006
Modification externeOui

Empreinte digitale

Examiner les sujets de recherche de « High precision measurement of the 32SH electron affinity by laser detachment microscopy ». Ensemble, ils forment une empreinte digitale unique.

Contient cette citation