High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se                         2                          surface

B. Canava; J. Vigneron; A. Etcheberry; J. F. Guillemoles; D. Lincot

doi:10.1016/S0169-4332(02)00186-1

High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se ₂ surface

B. Canava
, J. Vigneron
, A. Etcheberry
, J. F. Guillemoles
, D. Lincot

Institut Lavoisier de Versailles
Laboratoire Charles Friedel (LCF)

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Chemistry of co-evaporated Cu(In, Ga)Se ₂ (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu _2-x Se, In ₂ Se ₃ , ZnSe, Se ⁰ and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.

langue originale	Anglais
Pages (de - à)	8-14
Nombre de pages	7
journal	Applied Surface Science
Volume	202
Numéro de publication	1-2
Les DOIs	https://doi.org/10.1016/S0169-4332(02)00186-1
état	Publié - 15 déc. 2002
Modification externe	Oui

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10.1016/S0169-4332(02)00186-1

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@article{1dce2a5a9cb4423ba3fa6830ae702099,

title = " High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se 2 surface ",

abstract = " Chemistry of co-evaporated Cu(In, Ga)Se 2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu 2-x Se, In 2 Se 3 , ZnSe, Se 0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.",

keywords = "CIGS, Chemistry, Se, Surface, XPS",

author = "B. Canava and J. Vigneron and A. Etcheberry and Guillemoles, \{J. F.\} and D. Lincot",

year = "2002",

month = dec,

day = "15",

doi = "10.1016/S0169-4332(02)00186-1",

language = "English",

volume = "202",

pages = "8--14",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "1-2",

}

High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se ₂ surface . / Canava, B.; Vigneron, J.; Etcheberry, A. et al.
Dans: Applied Surface Science, Vol 202, Numéro 1-2, 15.12.2002, p. 8-14.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se 2 surface

AU - Canava, B.

AU - Vigneron, J.

AU - Etcheberry, A.

AU - Guillemoles, J. F.

AU - Lincot, D.

PY - 2002/12/15

Y1 - 2002/12/15

N2 - Chemistry of co-evaporated Cu(In, Ga)Se 2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu 2-x Se, In 2 Se 3 , ZnSe, Se 0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.

AB - Chemistry of co-evaporated Cu(In, Ga)Se 2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu 2-x Se, In 2 Se 3 , ZnSe, Se 0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.

KW - CIGS

KW - Chemistry

KW - Se

KW - Surface

KW - XPS

UR - https://www.scopus.com/pages/publications/0037114353

U2 - 10.1016/S0169-4332(02)00186-1

DO - 10.1016/S0169-4332(02)00186-1

M3 - Article

AN - SCOPUS:0037114353

SN - 0169-4332

VL - 202

SP - 8

EP - 14

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-2

ER -

High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se 2 surface

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High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se ₂ surface