Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells

Hamidreza Esmaielpour; Brandon K. Durant; Kyle R. Dorman; Vincent R. Whiteside; Jivtesh Garg; Tetsuya D. Mishima; Michael B. Santos; Ian R. Sellers; Jean Francois Guillemoles; Daniel Suchet

doi:10.1109/PVSC43889.2021.9518517

Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells

Hamidreza Esmaielpour
, Brandon K. Durant
, Kyle R. Dorman
, Vincent R. Whiteside
, Jivtesh Garg
, Tetsuya D. Mishima
, Michael B. Santos
, Ian R. Sellers
, Jean Francois Guillemoles
, Daniel Suchet

Institut Photovoltaïque d'Ile-de-France
University of Oklahoma

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Thermalization of photo-generated hot carriers via phonon mediated relaxation pathways is one of the main loss mechanisms in photovoltaic devices. Energy loss via hot carrier thermalization can be suppressed if the exchanged energy between hot carriers and phonons (mainly optical in polar semiconductors) is not transferred to low energy acoustic phonons (heat dissipation). In this study, the effects of barrier thickness in thermalization of hot carriers of InAs multi-quantum well (MQW) type-II structures are investigated. Experimental and theoretical results indicate that by increasing the thickness of the barrier - the hot carrier thermalization reduces. This effect is associated with the reduction of the Klemens mechanism via the increase of the phononic bandgap in the structure of the superlattice.

langue originale	Anglais
titre	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	1131-1133
Nombre de pages	3
ISBN (Electronique)	9781665419222
Les DOIs	https://doi.org/10.1109/PVSC43889.2021.9518517
état	Publié - 20 juin 2021
Evénement	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, États-Unis Durée: 20 juin 2021 → 25 juin 2021

Série de publications

Nom	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (imprimé)	0160-8371

Une conférence

Une conférence	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Pays/Territoire	États-Unis
La ville	Fort Lauderdale
période	20/06/21 → 25/06/21

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC43889.2021.9518517

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

Esmaielpour, H., Durant, B. K., Dorman, K. R., Whiteside, V. R., Garg, J., Mishima, T. D., Santos, M. B., Sellers, I. R., Guillemoles, J. F., & Suchet, D. (2021). Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells. Dans 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (p. 1131-1133). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518517

Esmaielpour, Hamidreza ; Durant, Brandon K. ; Dorman, Kyle R. et al. / Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells. 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1131-1133 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{2cbf47b253c34832b781c7f25c80179b,

title = "Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells",

abstract = "Thermalization of photo-generated hot carriers via phonon mediated relaxation pathways is one of the main loss mechanisms in photovoltaic devices. Energy loss via hot carrier thermalization can be suppressed if the exchanged energy between hot carriers and phonons (mainly optical in polar semiconductors) is not transferred to low energy acoustic phonons (heat dissipation). In this study, the effects of barrier thickness in thermalization of hot carriers of InAs multi-quantum well (MQW) type-II structures are investigated. Experimental and theoretical results indicate that by increasing the thickness of the barrier - the hot carrier thermalization reduces. This effect is associated with the reduction of the Klemens mechanism via the increase of the phononic bandgap in the structure of the superlattice.",

keywords = "Klemens mechanism, hot carriers, phonons engineering, thermalization coefficient",

author = "Hamidreza Esmaielpour and Durant, \{Brandon K.\} and Dorman, \{Kyle R.\} and Whiteside, \{Vincent R.\} and Jivtesh Garg and Mishima, \{Tetsuya D.\} and Santos, \{Michael B.\} and Sellers, \{Ian R.\} and Guillemoles, \{Jean Francois\} and Daniel Suchet",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518517",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1131--1133",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

}

Esmaielpour, H, Durant, BK, Dorman, KR, Whiteside, VR, Garg, J, Mishima, TD, Santos, MB, Sellers, IR, Guillemoles, JF & Suchet, D 2021, Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells. Dans 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., p. 1131-1133, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, États-Unis, 20/06/21. https://doi.org/10.1109/PVSC43889.2021.9518517

Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells. / Esmaielpour, Hamidreza; Durant, Brandon K.; Dorman, Kyle R. et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1131-1133 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells

AU - Esmaielpour, Hamidreza

AU - Durant, Brandon K.

AU - Dorman, Kyle R.

AU - Whiteside, Vincent R.

AU - Garg, Jivtesh

AU - Mishima, Tetsuya D.

AU - Santos, Michael B.

AU - Sellers, Ian R.

AU - Guillemoles, Jean Francois

AU - Suchet, Daniel

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Thermalization of photo-generated hot carriers via phonon mediated relaxation pathways is one of the main loss mechanisms in photovoltaic devices. Energy loss via hot carrier thermalization can be suppressed if the exchanged energy between hot carriers and phonons (mainly optical in polar semiconductors) is not transferred to low energy acoustic phonons (heat dissipation). In this study, the effects of barrier thickness in thermalization of hot carriers of InAs multi-quantum well (MQW) type-II structures are investigated. Experimental and theoretical results indicate that by increasing the thickness of the barrier - the hot carrier thermalization reduces. This effect is associated with the reduction of the Klemens mechanism via the increase of the phononic bandgap in the structure of the superlattice.

AB - Thermalization of photo-generated hot carriers via phonon mediated relaxation pathways is one of the main loss mechanisms in photovoltaic devices. Energy loss via hot carrier thermalization can be suppressed if the exchanged energy between hot carriers and phonons (mainly optical in polar semiconductors) is not transferred to low energy acoustic phonons (heat dissipation). In this study, the effects of barrier thickness in thermalization of hot carriers of InAs multi-quantum well (MQW) type-II structures are investigated. Experimental and theoretical results indicate that by increasing the thickness of the barrier - the hot carrier thermalization reduces. This effect is associated with the reduction of the Klemens mechanism via the increase of the phononic bandgap in the structure of the superlattice.

KW - Klemens mechanism

KW - hot carriers

KW - phonons engineering

KW - thermalization coefficient

UR - https://www.scopus.com/pages/publications/85115911387

U2 - 10.1109/PVSC43889.2021.9518517

DO - 10.1109/PVSC43889.2021.9518517

M3 - Conference contribution

AN - SCOPUS:85115911387

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1131

EP - 1133

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Esmaielpour H, Durant BK, Dorman KR, Whiteside VR, Garg J, Mishima TD et al. Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells. Dans 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1131-1133. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518517

Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells

Résumé

Série de publications

Une conférence

SDG des Nations Unies

Accès au document

Autres fichiers et liens

Empreinte digitale

Contient cette citation