@inproceedings{1a9e4c979a5a4fef818ceded65f45b17,
title = "Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs",
abstract = "We discuss the unambiguous detection of Auger electrons by electron emission (EE) spectroscopy from a cesiated InGaN/GaN light-emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high-energy electron peaks simultaneously with the droop in LED efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the {"}droop current{"} - the missing component of the injected current for light emission. We conclude that the droop originates from the onset of Auger processes. We compare such a direct identification of the droop mechanism with other identifications, most of them indirect and based on the many-parameter modeling of the dependence of the external quantum efficiency on the carrier injection.",
keywords = "Auger recombination, GaN, efficiency droop, electron emission, photoemission",
author = "Jacques Peretti and Claude Weisbuch and Justin Iveland and Marco Piccardo and Lucio Martinelli and Speck, \{James S.\}",
year = "2014",
month = jan,
day = "1",
doi = "10.1117/12.2038698",
language = "English",
isbn = "9780819499165",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Light-Emitting Diodes",
note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII ; Conference date: 04-02-2014 Through 06-02-2014",
}