Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

M. Arif; W. Elhuni; J. Streque; S. Sundaram; S. Belahsene; Y. El Gmili; M. Jordan; X. Li; G. Patriarche; A. Slaoui; A. Migan; R. Abderrahim; Z. Djebbour; P. L. Voss; J. P. Salvestrini; A. Ougazzaden

doi:10.1016/j.solmat.2016.09.030

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

M. Arif
, W. Elhuni
, J. Streque
, S. Sundaram
, S. Belahsene
, Y. El Gmili
, M. Jordan
, X. Li
, G. Patriarche
, A. Slaoui
, A. Migan
, R. Abderrahim
, Z. Djebbour
, P. L. Voss
, J. P. Salvestrini
, A. Ougazzaden

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN structure), with 8% indium concentration. The semibulk absorber shows peak external quantum efficiency of 85% and short current density of 0.57 mA/cm² under AM 1.5 G, i.e. almost four times higher than the typical InGaN solar cells based on single thick InGaN absorber. The power conversion efficiency is around 0.39% under AM 1.5 G, almost three times higher than state of the art for 8% indium incorporation. The improvement in power conversion efficiency is attributed to the enhancement in structural quality of the InGaN absorber. Simulations and experimental results are presented for an in depth investigation of the parameters limiting the power conversion efficiency of the solar cell. The semibulk absorber is an elegant solution for the realization of highly efficient InGaN-based PIN heterojunction solar cells.

langue originale	Anglais
Pages (de - à)	405-411
Nombre de pages	7
journal	Solar Energy Materials and Solar Cells
Volume	159
Les DOIs	https://doi.org/10.1016/j.solmat.2016.09.030
état	Publié - 1 janv. 2017

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Arif, M., Elhuni, W., Streque, J., Sundaram, S., Belahsene, S., El Gmili, Y., Jordan, M., Li, X., Patriarche, G., Slaoui, A., Migan, A., Abderrahim, R., Djebbour, Z., Voss, P. L., Salvestrini, J. P., & Ougazzaden, A. (2017). Improving InGaN heterojunction solar cells efficiency using a semibulk absorber. Solar Energy Materials and Solar Cells, 159, 405-411. https://doi.org/10.1016/j.solmat.2016.09.030

@article{307a9be4ac014829a37a2ae5c056c820,

title = "Improving InGaN heterojunction solar cells efficiency using a semibulk absorber",

abstract = "We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN structure), with 8\% indium concentration. The semibulk absorber shows peak external quantum efficiency of 85\% and short current density of 0.57 mA/cm2 under AM 1.5 G, i.e. almost four times higher than the typical InGaN solar cells based on single thick InGaN absorber. The power conversion efficiency is around 0.39\% under AM 1.5 G, almost three times higher than state of the art for 8\% indium incorporation. The improvement in power conversion efficiency is attributed to the enhancement in structural quality of the InGaN absorber. Simulations and experimental results are presented for an in depth investigation of the parameters limiting the power conversion efficiency of the solar cell. The semibulk absorber is an elegant solution for the realization of highly efficient InGaN-based PIN heterojunction solar cells.",

keywords = "InGaN, Semibulk, Solar cells",

author = "M. Arif and W. Elhuni and J. Streque and S. Sundaram and S. Belahsene and \{El Gmili\}, Y. and M. Jordan and X. Li and G. Patriarche and A. Slaoui and A. Migan and R. Abderrahim and Z. Djebbour and Voss, \{P. L.\} and Salvestrini, \{J. P.\} and A. Ougazzaden",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/j.solmat.2016.09.030",

language = "English",

volume = "159",

pages = "405--411",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

}

Arif, M, Elhuni, W, Streque, J, Sundaram, S, Belahsene, S, El Gmili, Y, Jordan, M, Li, X, Patriarche, G, Slaoui, A, Migan, A, Abderrahim, R, Djebbour, Z, Voss, PL, Salvestrini, JP & Ougazzaden, A 2017, 'Improving InGaN heterojunction solar cells efficiency using a semibulk absorber', Solar Energy Materials and Solar Cells, VOL. 159, p. 405-411. https://doi.org/10.1016/j.solmat.2016.09.030

TY - JOUR

T1 - Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

AU - Arif, M.

AU - Elhuni, W.

AU - Streque, J.

AU - Sundaram, S.

AU - Belahsene, S.

AU - El Gmili, Y.

AU - Jordan, M.

AU - Li, X.

AU - Patriarche, G.

AU - Slaoui, A.

AU - Migan, A.

AU - Abderrahim, R.

AU - Djebbour, Z.

AU - Voss, P. L.

AU - Salvestrini, J. P.

AU - Ougazzaden, A.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN structure), with 8% indium concentration. The semibulk absorber shows peak external quantum efficiency of 85% and short current density of 0.57 mA/cm2 under AM 1.5 G, i.e. almost four times higher than the typical InGaN solar cells based on single thick InGaN absorber. The power conversion efficiency is around 0.39% under AM 1.5 G, almost three times higher than state of the art for 8% indium incorporation. The improvement in power conversion efficiency is attributed to the enhancement in structural quality of the InGaN absorber. Simulations and experimental results are presented for an in depth investigation of the parameters limiting the power conversion efficiency of the solar cell. The semibulk absorber is an elegant solution for the realization of highly efficient InGaN-based PIN heterojunction solar cells.

AB - We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN structure), with 8% indium concentration. The semibulk absorber shows peak external quantum efficiency of 85% and short current density of 0.57 mA/cm2 under AM 1.5 G, i.e. almost four times higher than the typical InGaN solar cells based on single thick InGaN absorber. The power conversion efficiency is around 0.39% under AM 1.5 G, almost three times higher than state of the art for 8% indium incorporation. The improvement in power conversion efficiency is attributed to the enhancement in structural quality of the InGaN absorber. Simulations and experimental results are presented for an in depth investigation of the parameters limiting the power conversion efficiency of the solar cell. The semibulk absorber is an elegant solution for the realization of highly efficient InGaN-based PIN heterojunction solar cells.

KW - InGaN

KW - Semibulk

KW - Solar cells

UR - https://www.scopus.com/pages/publications/84990890464

U2 - 10.1016/j.solmat.2016.09.030

DO - 10.1016/j.solmat.2016.09.030

M3 - Article

AN - SCOPUS:84990890464

SN - 0927-0248

VL - 159

SP - 405

EP - 411

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

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