In situ infrared characterization of the silicon surface in hydrofluoric acid

J. N. Chazalviel; F. Ozanam

doi:10.1063/1.365348

In situ infrared characterization of the silicon surface in hydrofluoric acid

J. N. Chazalviel
, F. Ozanam

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiH_x groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm^-1 observed by these authors actually arises from electrolyte absorption.

langue originale	Anglais
Pages (de - à)	7684-7686
Nombre de pages	3
journal	Journal of Applied Physics
Volume	81
Numéro de publication	11
Les DOIs	https://doi.org/10.1063/1.365348
état	Publié - 1 juin 1997

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title = "In situ infrared characterization of the silicon surface in hydrofluoric acid",

abstract = "The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm-1 observed by these authors actually arises from electrolyte absorption.",

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N2 - The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm-1 observed by these authors actually arises from electrolyte absorption.

AB - The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm-1 observed by these authors actually arises from electrolyte absorption.

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DO - 10.1063/1.365348

M3 - Article

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In situ infrared characterization of the silicon surface in hydrofluoric acid

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