@inproceedings{3c23ad1a2f6042e4884394b0a3e4985e,
title = "In situ investigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry",
abstract = "A detailed in situ study, by Infrared Phase Modulated Ellipsometry (IRPME), of interfaces between amorphous silicon (a-Si:H) and silicon nitride (a-SiNx) is presented. A behaviour compatible with a sharp interface is observed when a-SiNx is deposited on top of a-Si:H, the underlayer material being very weakly influenced by the deposition of the overlayer. In contrast a graded transition is observed when a-SiNx is deposited first. In the latter case, the IR measurements directly reveal a nitrogen incorporation in the first monolayers of a-Si:H together with an increase of intensity of the SiH bonds at the interface.",
author = "H. Shirai and B. Drevillon and R. Ossikovski",
year = "1993",
month = dec,
day = "1",
language = "English",
isbn = "1558991794",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "425--430",
editor = "Jerzy Kanicki and Warren, \{William L.\} and Devine, \{Roderick A.B.\} and Masakiyo Matsumura",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of a Symposium on Amorphous Insulating Thin Films ; Conference date: 01-12-1992 Through 04-12-1992",
}