TY - GEN
T1 - In Situ Modulated PhotoLuminescence for Process Optimization of Crystalline Silicon Passivation
AU - Desthieux, Anatole
AU - Sreng, Mengkoing
AU - Bulkin, Pavel
AU - Florea, Ileana
AU - Drahi, Etienne
AU - Bazer-Bachi, Barbara
AU - Vanel, Jean Charles
AU - Silva, Francois
AU - Posada, Jorge
AU - I Cabarrocas, Pere Roca
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - Modulated Photoluminescence (MPL) is a powerful tool for measuring the minority carrier lifetime of solar cells. An in house in situ MPL equipped Plasma Enhanced Chemical Vapor Deposition reactor enables the monitoring of passivation properties of solar cells during the fabrication steps of devices. In this study, this tool was used to analyze the impact of annealing steps on passivation properties. First, samples passivated by an aluminum oxide layer were annealed and the evolution of the effective lifetime in the wafer was studied. This allowed to optimize the temperature and duration of the heat treatment. A similar study was made on Fired Passivating Contacts with a passivating stack of SiOx/(p) \mu\mathrm{c}-Si:H/SiNx:H. An interesting low-lifetime regime is consistently observed when the samples undergo a high temperature (\mathrm{T} > 350^{\circ}\mathrm{C}) annealing step, followed by a lifetime recovery during the subsequent cooling step. Corona charge and TEM images allowed to get a deeper understanding of the passivation mechanisms evidenced during in situ MPL measurements.
AB - Modulated Photoluminescence (MPL) is a powerful tool for measuring the minority carrier lifetime of solar cells. An in house in situ MPL equipped Plasma Enhanced Chemical Vapor Deposition reactor enables the monitoring of passivation properties of solar cells during the fabrication steps of devices. In this study, this tool was used to analyze the impact of annealing steps on passivation properties. First, samples passivated by an aluminum oxide layer were annealed and the evolution of the effective lifetime in the wafer was studied. This allowed to optimize the temperature and duration of the heat treatment. A similar study was made on Fired Passivating Contacts with a passivating stack of SiOx/(p) \mu\mathrm{c}-Si:H/SiNx:H. An interesting low-lifetime regime is consistently observed when the samples undergo a high temperature (\mathrm{T} > 350^{\circ}\mathrm{C}) annealing step, followed by a lifetime recovery during the subsequent cooling step. Corona charge and TEM images allowed to get a deeper understanding of the passivation mechanisms evidenced during in situ MPL measurements.
KW - AlOx
KW - Annealing
KW - Fired Passivated Contact
KW - In situ
KW - Modulated Photoluminescence
KW - Silicon Solar Cells
U2 - 10.1109/PVSC45281.2020.9300631
DO - 10.1109/PVSC45281.2020.9300631
M3 - Conference contribution
AN - SCOPUS:85099581209
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 964
EP - 968
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -