Résumé
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced As-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the As-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the As antisite in electron-irradiated GaAs.
| langue originale | Anglais |
|---|---|
| Pages | 267-270 |
| Nombre de pages | 4 |
| état | Publié - 1 déc. 1996 |
| Modification externe | Oui |
| Evénement | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Durée: 29 avr. 1996 → 3 mai 1996 |
Une conférence
| Une conférence | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
|---|---|
| La ville | Toulouse, Fr |
| période | 29/04/96 → 3/05/96 |
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