InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 μm

G. Moreau; A. Martinez; D. Y. Cong; K. Merghem; A. Miard; A. Lemaitre; P. Voisin; A. Ramdane

doi:10.1049/el:20073515

InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 μm

G. Moreau
, A. Martinez
, D. Y. Cong
, K. Merghem
, A. Miard
, A. Lemaitre
, P. Voisin
, A. Ramdane

CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100nm) applications at 1.55m is demonstrated. A ∼35 enhancement of the phase variation (V_π∼3.5V for 4mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides.

langue originale	Anglais
Pages (de - à)	124-125
Nombre de pages	2
journal	Electronics Letters
Volume	43
Numéro de publication	2
Les DOIs	https://doi.org/10.1049/el:20073515
état	Publié - 5 févr. 2007

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10.1049/el:20073515

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title = "InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 μm",

abstract = "The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100nm) applications at 1.55m is demonstrated. A ∼35 enhancement of the phase variation (Vπ∼3.5V for 4mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides.",

author = "G. Moreau and A. Martinez and Cong, \{D. Y.\} and K. Merghem and A. Miard and A. Lemaitre and P. Voisin and A. Ramdane",

year = "2007",

month = feb,

day = "5",

doi = "10.1049/el:20073515",

language = "English",

volume = "43",

pages = "124--125",

journal = "Electronics Letters",

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T1 - InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 μm

AU - Moreau, G.

AU - Martinez, A.

AU - Cong, D. Y.

AU - Merghem, K.

AU - Miard, A.

AU - Lemaitre, A.

AU - Voisin, P.

AU - Ramdane, A.

PY - 2007/2/5

Y1 - 2007/2/5

N2 - The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100nm) applications at 1.55m is demonstrated. A ∼35 enhancement of the phase variation (Vπ∼3.5V for 4mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides.

AB - The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100nm) applications at 1.55m is demonstrated. A ∼35 enhancement of the phase variation (Vπ∼3.5V for 4mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides.

U2 - 10.1049/el:20073515

DO - 10.1049/el:20073515

M3 - Article

AN - SCOPUS:33846626902

SN - 0013-5194

VL - 43

SP - 124

EP - 125

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 μm

Résumé

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