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Intensity noise and pulse oscillations of an InAs/GaAs quantum dot laser on germanium

  • Yue Guang Zhou
  • , Jianan Duan
  • , Heming Huang
  • , Xu Yi Zhao
  • , Chun Fang Cao
  • , Qian Gong
  • , Frederic Grillot
  • , Cheng Wang
  • School of Information Science and Technology
  • ShanghaiTech University
  • CNRS LTCI
  • State Key Laboratory of Functional Materials for Informatics
  • Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
  • University of New Mexico

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

2 Citations (Scopus)

Résumé

This paper investigates the intensity noise and pulse oscillation characteristics of an InAs/GaAs quantum dot laser epitaxially grown on germanium. We show that the relative intensity noise of the free-running laser generally decreases with increasing pump current, and the minimum value reaches down to about -126 dB/Hz. The intensity noise is hardly affected by the optical feedback, unless there is a resonance or pulse oscillation in the noise spectrum. The laser pumped at a high current is more sensitive to the optical feedback. Interestingly, it is found that the free-running Ge-based quantum dot laser generates self-sustained pulse oscillations with one period or two periods upon the pump current, without incorporating saturable absorbers. This behavior is valuable for both self-generation of photonic microwaves and for understanding nonlinear dynamics of semiconductor lasers.

langue originaleAnglais
Numéro d'article8717669
journalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Numéro de publication6
Les DOIs
étatPublié - 1 nov. 2019
Modification externeOui

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