Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy

Paul Narchi; Twan Bearda; Martin Foldyna; Patricia Prod'Homme; Pere Roca I. Cabarrocas

doi:10.1109/PVSC.2017.8366730

Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy

Paul Narchi
, Twan Bearda
, Martin Foldyna
, Patricia Prod'Homme
, Pere Roca I. Cabarrocas

Total
Université Paris-Saclay
Imec

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

The use of Kelvin Probe Force Microscopy to investigate PN junctions under illumination and electrical bias has been shown to be an effective way to analyze the electrical properties of solar cells at the nanoscale. We use it here, for the first time, on interdigitated back contact solar cells. Measurements are performed between the metallic fingers under an electrical bias in the dark and under illumination in open circuit conditions. Our results show that that KPFM could be used to identify and localize diodes resistance losses at the nanoscale.

langue originale	Anglais
titre	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	2438-2442
Nombre de pages	5
ISBN (Electronique)	9781509056057
Les DOIs	https://doi.org/10.1109/PVSC.2017.8366730
état	Publié - 1 janv. 2017
Modification externe	Oui
Evénement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, États-Unis Durée: 25 juin 2017 → 30 juin 2017

Série de publications

Nom	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Une conférence

Une conférence	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Pays/Territoire	États-Unis
La ville	Washington
période	25/06/17 → 30/06/17

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2017.8366730

Contient cette citation

Narchi, P., Bearda, T., Foldyna, M., Prod'Homme, P., & Cabarrocas, P. R. I. (2017). Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (p. 2438-2442). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366730

Narchi, Paul ; Bearda, Twan ; Foldyna, Martin et al. / Interdigitated back contact silicon solar cells : Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2438-2442 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{b32f005d8b094af79711b591cd3bceab,

title = "Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy",

abstract = "The use of Kelvin Probe Force Microscopy to investigate PN junctions under illumination and electrical bias has been shown to be an effective way to analyze the electrical properties of solar cells at the nanoscale. We use it here, for the first time, on interdigitated back contact solar cells. Measurements are performed between the metallic fingers under an electrical bias in the dark and under illumination in open circuit conditions. Our results show that that KPFM could be used to identify and localize diodes resistance losses at the nanoscale.",

keywords = "Heterojunction, Interdigitated Back Contact, Kelvin Probe Force Microscopy, Silicon, Solar Cells",

author = "Paul Narchi and Twan Bearda and Martin Foldyna and Patricia Prod'Homme and Cabarrocas, \{Pere Roca I.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

month = jan,

day = "1",

doi = "10.1109/PVSC.2017.8366730",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2438--2442",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

Narchi, P, Bearda, T, Foldyna, M, Prod'Homme, P & Cabarrocas, PRI 2017, Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., p. 2438-2442, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, États-Unis, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366730

Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy. / Narchi, Paul; Bearda, Twan; Foldyna, Martin et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2438-2442 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Interdigitated back contact silicon solar cells

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Narchi, Paul

AU - Bearda, Twan

AU - Foldyna, Martin

AU - Prod'Homme, Patricia

AU - Cabarrocas, Pere Roca I.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The use of Kelvin Probe Force Microscopy to investigate PN junctions under illumination and electrical bias has been shown to be an effective way to analyze the electrical properties of solar cells at the nanoscale. We use it here, for the first time, on interdigitated back contact solar cells. Measurements are performed between the metallic fingers under an electrical bias in the dark and under illumination in open circuit conditions. Our results show that that KPFM could be used to identify and localize diodes resistance losses at the nanoscale.

AB - The use of Kelvin Probe Force Microscopy to investigate PN junctions under illumination and electrical bias has been shown to be an effective way to analyze the electrical properties of solar cells at the nanoscale. We use it here, for the first time, on interdigitated back contact solar cells. Measurements are performed between the metallic fingers under an electrical bias in the dark and under illumination in open circuit conditions. Our results show that that KPFM could be used to identify and localize diodes resistance losses at the nanoscale.

KW - Heterojunction

KW - Interdigitated Back Contact

KW - Kelvin Probe Force Microscopy

KW - Silicon

KW - Solar Cells

U2 - 10.1109/PVSC.2017.8366730

DO - 10.1109/PVSC.2017.8366730

M3 - Conference contribution

AN - SCOPUS:85048464416

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 2438

EP - 2442

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -

Narchi P, Bearda T, Foldyna M, Prod'Homme P, Cabarrocas PRI. Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2438-2442. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366730

Interdigitated back contact silicon solar cells: Diode and resistance investigation at nanoscale using Kelvin Probe Force Microscopy

Résumé

Série de publications

Une conférence

SDG des Nations Unies

Accès au document

Empreinte digitale

Contient cette citation