Interface defects in a-Si:H/c-Si heterojunction solar cells

A. Defresne; O. Plantevin; I. P. Sobkowicz; J. Bourçois; P. Roca I Cabarrocas

doi:10.1016/j.nimb.2015.04.009

Interface defects in a-Si:H/c-Si heterojunction solar cells

A. Defresne
, O. Plantevin
, I. P. Sobkowicz
, J. Bourçois
, P. Roca I Cabarrocas

Université Paris-Sud
Institut polytechnique de Paris
Total

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The ability to incorporate a low concentration of defects at different near-surface or interface locations in a silicon heterojunction solar cell is reported here using argon ion implantation. Optical properties of the irradiated layers are addressed using spectroscopic ellipsometry while non-radiative recombinations through defects are addressed using photoconductance and photoluminescence measurements. Low energy ion irradiation at 1 keV under fluences up to 7 × 10¹³ cm^-2 induces no cell degradation while higher ion energies associated to larger penetration depths close to the amorphous/crystalline interface show increased degradation with ion fluence. This behavior allows to estimate some interface defect concentration threshold for cell degradation.

langue originale	Anglais
Pages (de - à)	133-136
Nombre de pages	4
journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	365
Les DOIs	https://doi.org/10.1016/j.nimb.2015.04.009
état	Publié - 15 déc. 2015

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10.1016/j.nimb.2015.04.009

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title = "Interface defects in a-Si:H/c-Si heterojunction solar cells",

abstract = "The ability to incorporate a low concentration of defects at different near-surface or interface locations in a silicon heterojunction solar cell is reported here using argon ion implantation. Optical properties of the irradiated layers are addressed using spectroscopic ellipsometry while non-radiative recombinations through defects are addressed using photoconductance and photoluminescence measurements. Low energy ion irradiation at 1 keV under fluences up to 7 × 1013 cm-2 induces no cell degradation while higher ion energies associated to larger penetration depths close to the amorphous/crystalline interface show increased degradation with ion fluence. This behavior allows to estimate some interface defect concentration threshold for cell degradation.",

keywords = "Heterojunction, Irradiation defects, Semiconductors, Solar cells, Thin layers",

author = "A. Defresne and O. Plantevin and Sobkowicz, \{I. P.\} and J. Bour{\c c}ois and \{Roca I Cabarrocas\}, P.",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.nimb.2015.04.009",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Interface defects in a-Si:H/c-Si heterojunction solar cells

AU - Defresne, A.

AU - Plantevin, O.

AU - Sobkowicz, I. P.

AU - Bourçois, J.

AU - Roca I Cabarrocas, P.

PY - 2015/12/15

Y1 - 2015/12/15

N2 - The ability to incorporate a low concentration of defects at different near-surface or interface locations in a silicon heterojunction solar cell is reported here using argon ion implantation. Optical properties of the irradiated layers are addressed using spectroscopic ellipsometry while non-radiative recombinations through defects are addressed using photoconductance and photoluminescence measurements. Low energy ion irradiation at 1 keV under fluences up to 7 × 1013 cm-2 induces no cell degradation while higher ion energies associated to larger penetration depths close to the amorphous/crystalline interface show increased degradation with ion fluence. This behavior allows to estimate some interface defect concentration threshold for cell degradation.

AB - The ability to incorporate a low concentration of defects at different near-surface or interface locations in a silicon heterojunction solar cell is reported here using argon ion implantation. Optical properties of the irradiated layers are addressed using spectroscopic ellipsometry while non-radiative recombinations through defects are addressed using photoconductance and photoluminescence measurements. Low energy ion irradiation at 1 keV under fluences up to 7 × 1013 cm-2 induces no cell degradation while higher ion energies associated to larger penetration depths close to the amorphous/crystalline interface show increased degradation with ion fluence. This behavior allows to estimate some interface defect concentration threshold for cell degradation.

KW - Heterojunction

KW - Irradiation defects

KW - Semiconductors

KW - Solar cells

KW - Thin layers

U2 - 10.1016/j.nimb.2015.04.009

DO - 10.1016/j.nimb.2015.04.009

M3 - Article

AN - SCOPUS:84948582629

SN - 0168-583X

VL - 365

SP - 133

EP - 136

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Interface defects in a-Si:H/c-Si heterojunction solar cells

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