Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J. E. Rault; G. Agnus; T. Maroutian; V. Pillard; Ph Lecoeur; G. Niu; B. Vilquin; M. G. Silly; A. Bendounan; F. Sirotti; N. Barrett

doi:10.1103/PhysRevB.87.155146

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J. E. Rault
, G. Agnus
, T. Maroutian
, V. Pillard
, Ph Lecoeur
, G. Niu
, B. Vilquin
, M. G. Silly
, A. Bendounan
, F. Sirotti
, N. Barrett

CEA/UVSQ/CNRS
Institut d'Electronique Fondamentale
Université Paris-Saclay
Université de Lyon
Synchrotron SOLEIL

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

48 Citations (Scopus)

Résumé

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO₃/Nb-doped SrTiO₃, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

langue originale	Anglais
Numéro d'article	155146
journal	Physical Review B - Condensed Matter and Materials Physics
Volume	87
Numéro de publication	15
Les DOIs	https://doi.org/10.1103/PhysRevB.87.155146
état	Publié - 26 avr. 2013
Modification externe	Oui

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10.1103/PhysRevB.87.155146

Contient cette citation

Rault, J. E., Agnus, G., Maroutian, T., Pillard, V., Lecoeur, P., Niu, G., Vilquin, B., Silly, M. G., Bendounan, A., Sirotti, F., & Barrett, N. (2013). Interface electronic structure in a metal/ferroelectric heterostructure under applied bias. Physical Review B - Condensed Matter and Materials Physics, 87(15), Article 155146. https://doi.org/10.1103/PhysRevB.87.155146

@article{61831de87bad48ca90501cb140ad585e,

title = "Interface electronic structure in a metal/ferroelectric heterostructure under applied bias",

abstract = "The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.",

author = "Rault, \{J. E.\} and G. Agnus and T. Maroutian and V. Pillard and Ph Lecoeur and G. Niu and B. Vilquin and Silly, \{M. G.\} and A. Bendounan and F. Sirotti and N. Barrett",

year = "2013",

month = apr,

day = "26",

doi = "10.1103/PhysRevB.87.155146",

language = "English",

volume = "87",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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TY - JOUR

T1 - Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

AU - Rault, J. E.

AU - Agnus, G.

AU - Maroutian, T.

AU - Pillard, V.

AU - Lecoeur, Ph

AU - Niu, G.

AU - Vilquin, B.

AU - Silly, M. G.

AU - Bendounan, A.

AU - Sirotti, F.

AU - Barrett, N.

PY - 2013/4/26

Y1 - 2013/4/26

N2 - The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

AB - The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

U2 - 10.1103/PhysRevB.87.155146

DO - 10.1103/PhysRevB.87.155146

M3 - Article

AN - SCOPUS:84877043761

SN - 1098-0121

VL - 87

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155146

ER -

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

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