Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)

F. Fossard; A. Helman; F. H. Julien; M. Gendry; J. Brault; E. Péronne; A. Alexandrou; S. E. Schacham; E. Finkman

doi:10.1016/S1386-9477(02)00779-8

Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)

F. Fossard
, A. Helman
, F. H. Julien
, M. Gendry
, J. Brault
, E. Péronne
, A. Alexandrou
, S. E. Schacham
, E. Finkman

Université Paris-Saclay
Université de Lyon
Ariel University
Technion - Israel Institute of Technology

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

4 Citations (Scopus)

Résumé

InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [1 1 0] and [1 - 10] directions.

langue originale	Anglais
Pages (de - à)	82-83
Nombre de pages	2
journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	17
Numéro de publication	1-4
Les DOIs	https://doi.org/10.1016/S1386-9477(02)00779-8
état	Publié - 1 avr. 2003
Evénement	Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Durée: 22 juil. 2002 → 26 juil. 2002

Accès au document

10.1016/S1386-9477(02)00779-8

Contient cette citation

@article{5fde388e423047dba2fc9de88f69b431,

title = "Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)",

abstract = "InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [1 1 0] and [1 - 10] directions.",

keywords = "III-V semiconductors, Intraband transitions, Quantum dots, Quantum wires",

author = "F. Fossard and A. Helman and Julien, \{F. H.\} and M. Gendry and J. Brault and E. P{\'e}ronne and A. Alexandrou and Schacham, \{S. E.\} and E. Finkman",

year = "2003",

month = apr,

day = "1",

doi = "10.1016/S1386-9477(02)00779-8",

language = "English",

volume = "17",

pages = "82--83",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings pf the International Conference on Superlattices - ICSNN 2002 ; Conference date: 22-07-2002 Through 26-07-2002",

}

TY - JOUR

T1 - Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)

AU - Fossard, F.

AU - Helman, A.

AU - Julien, F. H.

AU - Gendry, M.

AU - Brault, J.

AU - Péronne, E.

AU - Alexandrou, A.

AU - Schacham, S. E.

AU - Finkman, E.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [1 1 0] and [1 - 10] directions.

AB - InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [1 1 0] and [1 - 10] directions.

KW - III-V semiconductors

KW - Intraband transitions

KW - Quantum dots

KW - Quantum wires

U2 - 10.1016/S1386-9477(02)00779-8

DO - 10.1016/S1386-9477(02)00779-8

M3 - Conference article

AN - SCOPUS:0037395168

SN - 1386-9477

VL - 17

SP - 82

EP - 83

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - Proceedings pf the International Conference on Superlattices - ICSNN 2002

Y2 - 22 July 2002 through 26 July 2002

ER -

Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)

Résumé

Accès au document

Empreinte digitale

Contient cette citation