Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

K. Krambrock; C. Le Berre; C. Corbel; K. Saarinen; P. Hautojarvi

doi:10.4028/www.scientific.net/msf.196-201.195

Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

K. Krambrock
, C. Le Berre
, C. Corbel
, K. Saarinen
, P. Hautojarvi

Institut National des Sciences et Techniques Nucléaires

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2⁺, and near bandgap Reverse Contrast absorptions, a paramagnetic Ga_As-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.

langue originale	Anglais
Pages (de - à)	195-200
Nombre de pages	6
journal	Materials Science Forum
Volume	196-201
Numéro de publication	pt 1
Les DOIs	https://doi.org/10.4028/www.scientific.net/msf.196-201.195
état	Publié - 1 janv. 1995
Modification externe	Oui
Evénement	Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Durée: 23 juil. 1995 → 28 juil. 1995

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10.4028/www.scientific.net/msf.196-201.195

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title = "Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR",

abstract = "A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2+, and near bandgap Reverse Contrast absorptions, a paramagnetic GaAs-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.",

author = "K. Krambrock and \{Le Berre\}, C. and C. Corbel and K. Saarinen and P. Hautojarvi",

year = "1995",

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AU - Krambrock, K.

AU - Le Berre, C.

AU - Corbel, C.

AU - Saarinen, K.

AU - Hautojarvi, P.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2+, and near bandgap Reverse Contrast absorptions, a paramagnetic GaAs-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.

AB - A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2+, and near bandgap Reverse Contrast absorptions, a paramagnetic GaAs-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.

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DO - 10.4028/www.scientific.net/msf.196-201.195

M3 - Conference article

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VL - 196-201

SP - 195

EP - 200

JO - Materials Science Forum

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IS - pt 1

T2 - Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)

Y2 - 23 July 1995 through 28 July 1995

ER -

Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

Résumé

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