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Investigation of photoelectrochemical deposition of Zn(S,O) via nitrate ion reduction in the presence of thiourea

  • S. Gallanti
  • , E. Chassaing
  • , M. Bouttemy
  • , E. Etcheberry
  • , D. Lincot
  • , N. Naghavi
  • Institut Photovoltaïque d'Ile-de-France
  • Université Versailles-Saint Quentin

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Résumé

In this study, ZnO nanoporous layers have been deposited on Glass/Mo/Cu(In,Ga)Se2 substrate via nitrate ions reduction in presence of thiourea. The photoelectrochemical behavior of p-type semi-conductor Copper Indium Gallium Diselenide (CIGSe) has been studied in acidic medium for different pH values and different light intensities. Then, the effect of thiourea concentration between 0 and 1.0 M on the nitrate reduction in presence of zinc ion has been investigated by cyclic voltammetry in order to find the optimal potential for photoelectrodeposition. Results show that thiourea impacts the resulting photocurrent and the potential of the nitrates reduction. The photoelectrodeposited films have been characterized by Scanning Electron Microscopy, X-Ray Diffraction and X-Ray Photoelectron Spectroscopy. These analyses highlight that thiourea addition causes a change in film morphology, which is composed of well-crystallized ZnO with no sulfur incorporation. Moreover, thiourea seems to be an interesting additive to obtain nanoporous ZnO films on CIGSe.

langue originaleAnglais
titreProcesses at the Semiconductor Solution Interface 6
rédacteurs en chefC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. P. Lynch, P. M. Vereecken, H. Wang, O. M. Leonte
EditeurElectrochemical Society Inc.
Pages151-162
Nombre de pages12
Edition6
ISBN (Electronique)9781607685968
Les DOIs
étatPublié - 1 janv. 2015
EvénementSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting - Chicago, États-Unis
Durée: 24 mai 201528 mai 2015

Série de publications

NomECS Transactions
nombre6
Volume66
ISSN (imprimé)1938-6737
ISSN (Electronique)1938-5862

Une conférence

Une conférenceSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting
Pays/TerritoireÉtats-Unis
La villeChicago
période24/05/1528/05/15

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