Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

B. Kalache; A. I. Kosarev; R. Vanderhaghen; Roca P. Cabarrocas

doi:10.1063/1.1524707

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

B. Kalache
, A. I. Kosarev
, R. Vanderhaghen
, Roca P. Cabarrocas

Institut polytechnique de Paris

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.

langue originale	Anglais
Pages (de - à)	1262-1273
Nombre de pages	12
journal	Journal of Applied Physics
Volume	93
Numéro de publication	2
Les DOIs	https://doi.org/10.1063/1.1524707
état	Publié - 15 janv. 2003

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10.1063/1.1524707

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title = "Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties",

abstract = "The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.",

author = "B. Kalache and Kosarev, \{A. I.\} and R. Vanderhaghen and Cabarrocas, \{Roca P.\}",

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T1 - Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

AU - Kalache, B.

AU - Kosarev, A. I.

AU - Vanderhaghen, R.

AU - Cabarrocas, Roca P.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.

AB - The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.

U2 - 10.1063/1.1524707

DO - 10.1063/1.1524707

M3 - Article

AN - SCOPUS:0037439882

SN - 0021-8979

VL - 93

SP - 1262

EP - 1273

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

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