Ion-induced secondary electron emission in SiH4 glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate

Christian Böhm; Jérôme Perrin; Pere Roca I Cabarrocas

doi:10.1063/1.353070

Ion-induced secondary electron emission in SiH₄ glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate

Christian Böhm
, Jérôme Perrin
, Pere Roca I Cabarrocas

Institut polytechnique de Paris

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

19 Citations (Scopus)

Résumé

The ion-induced secondary electron emission coefficient γ from the a-Si:H film deposited from a SiH₄ glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH₄ pressure and discharge power density, γ≊0.033±0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250°C, when the SiH₄ molecular density is kept constant. However, the a-Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH₂ radicals arising from SiH₄ dissociation.

langue originale	Anglais
Pages (de - à)	2578-2580
Nombre de pages	3
journal	Journal of Applied Physics
Volume	73
Numéro de publication	5
Les DOIs	https://doi.org/10.1063/1.353070
état	Publié - 1 déc. 1993

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10.1063/1.353070

Contient cette citation

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title = "Ion-induced secondary electron emission in SiH4 glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate",

abstract = "The ion-induced secondary electron emission coefficient γ from the a-Si:H film deposited from a SiH4 glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH4 pressure and discharge power density, γ≊0.033±0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250°C, when the SiH4 molecular density is kept constant. However, the a-Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH2 radicals arising from SiH4 dissociation.",

author = "Christian B{\"o}hm and J{\'e}r{\^o}me Perrin and \{Roca I Cabarrocas\}, Pere",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.353070",

language = "English",

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pages = "2578--2580",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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Ion-induced secondary electron emission in SiH₄ glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate. / Böhm, Christian; Perrin, Jérôme; Roca I Cabarrocas, Pere.
Dans: Journal of Applied Physics, Vol 73, Numéro 5, 01.12.1993, p. 2578-2580.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Ion-induced secondary electron emission in SiH4 glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate

AU - Böhm, Christian

AU - Perrin, Jérôme

AU - Roca I Cabarrocas, Pere

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The ion-induced secondary electron emission coefficient γ from the a-Si:H film deposited from a SiH4 glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH4 pressure and discharge power density, γ≊0.033±0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250°C, when the SiH4 molecular density is kept constant. However, the a-Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH2 radicals arising from SiH4 dissociation.

AB - The ion-induced secondary electron emission coefficient γ from the a-Si:H film deposited from a SiH4 glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH4 pressure and discharge power density, γ≊0.033±0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250°C, when the SiH4 molecular density is kept constant. However, the a-Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH2 radicals arising from SiH4 dissociation.

U2 - 10.1063/1.353070

DO - 10.1063/1.353070

M3 - Article

AN - SCOPUS:4243075440

SN - 0021-8979

VL - 73

SP - 2578

EP - 2580

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Ion-induced secondary electron emission in SiH4 glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate

Résumé

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Contient cette citation

Ion-induced secondary electron emission in SiH₄ glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate